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Initial rate of carrier density and mobility change in heavily doped silicon irradiated by low energy particles; Nachal`nye skorosti izmeneniya kontsentratsii i podvizhnosti v sil`nolegirovannom kremnii, obluchennom nizkoehnergeticheskimi chastitsami

Technical Report:

Abstract

The initial rate of carrier removal and the growth of mobility in heavily doped silicon irradiated by low-energy particles are considered. The quantitative description of these effects are given. A new method is proposed to determine the cross-section for formation of radiation defects in such materials from the value of saturation of the initial rate of carrier removal at high levels of doping. The experimentally estimated values of the cross-sections are discussed. 36 refs.; 6 figs.
Publication Date:
Dec 31, 1989
Product Type:
Technical Report
Report Number:
IAE-4955-9
Reference Number:
SCA: 665300; PA: AIX-22:081931; SN: 91000608974
Resource Relation:
Other Information: PBD: 1989
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; SILICON; ATOMIC DISPLACEMENTS; FRENKEL DEFECTS; BORON ADDITIONS; CHARGE CARRIERS; CROSS SECTIONS; CRYSTALS; DEUTERON BEAMS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; GAMMA RADIATION; MEV RANGE 01-10; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; QUANTITY RATIO; RADIATION DOSES; 665300; INTERACTIONS BETWEEN BEAMS AND CONDENSED MATTER
OSTI ID:
10105112
Research Organizations:
Gosudarstvennyj Komitet po Ispol`zovaniyu Atomnoj Ehnergii SSSR, Moscow (Russian Federation). Inst. Atomnoj Ehnergii
Country of Origin:
USSR
Language:
Russian
Other Identifying Numbers:
Other: ON: DE92609285; TRN: SU9107679081931
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
INIS
Size:
21 p.
Announcement Date:
Jun 30, 2005

Technical Report:

Citation Formats

Litvinov, V L, Ocheretyanskij, A L, Stuchebnikov, V M, Ukhin, N A, and Churakov, Yu I. Initial rate of carrier density and mobility change in heavily doped silicon irradiated by low energy particles; Nachal`nye skorosti izmeneniya kontsentratsii i podvizhnosti v sil`nolegirovannom kremnii, obluchennom nizkoehnergeticheskimi chastitsami. USSR: N. p., 1989. Web.
Litvinov, V L, Ocheretyanskij, A L, Stuchebnikov, V M, Ukhin, N A, & Churakov, Yu I. Initial rate of carrier density and mobility change in heavily doped silicon irradiated by low energy particles; Nachal`nye skorosti izmeneniya kontsentratsii i podvizhnosti v sil`nolegirovannom kremnii, obluchennom nizkoehnergeticheskimi chastitsami. USSR.
Litvinov, V L, Ocheretyanskij, A L, Stuchebnikov, V M, Ukhin, N A, and Churakov, Yu I. 1989. "Initial rate of carrier density and mobility change in heavily doped silicon irradiated by low energy particles; Nachal`nye skorosti izmeneniya kontsentratsii i podvizhnosti v sil`nolegirovannom kremnii, obluchennom nizkoehnergeticheskimi chastitsami." USSR.
@misc{etde_10105112,
title = {Initial rate of carrier density and mobility change in heavily doped silicon irradiated by low energy particles; Nachal`nye skorosti izmeneniya kontsentratsii i podvizhnosti v sil`nolegirovannom kremnii, obluchennom nizkoehnergeticheskimi chastitsami}
author = {Litvinov, V L, Ocheretyanskij, A L, Stuchebnikov, V M, Ukhin, N A, and Churakov, Yu I}
abstractNote = {The initial rate of carrier removal and the growth of mobility in heavily doped silicon irradiated by low-energy particles are considered. The quantitative description of these effects are given. A new method is proposed to determine the cross-section for formation of radiation defects in such materials from the value of saturation of the initial rate of carrier removal at high levels of doping. The experimentally estimated values of the cross-sections are discussed. 36 refs.; 6 figs.}
place = {USSR}
year = {1989}
month = {Dec}
}