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Study on Silicon detectors

Abstract

Prototypes of Silicon microstrip detectors and Silicon large area detectors (3x2 cm{sup 2}), realized directly by our group, either by ion implantation or by diffusion are presented. The physical detector characteristics and their performances determined by exposing them to different radioactive sources and the results of extensive tests on passivation, where new technological ways have been investigated, are discussed. The calculation of the different terms contributing to the total dark current is reported.
Authors:
Gervino, G; Boero, M; Manfredotti, C; [1]  Icardi, M; [2]  Gabutti, A; Bagnolatti, E; [3]  Monticone, E [4] 
  1. Istituto Nazionale di Fisica Nucleare, Milan (Italy)
  2. Ansaldo SpA, Genoa (Italy)
  3. Argonne National Lab., IL (United States)
  4. Istituto Elettrotecnico Nazionale, Turin (Italy)
Publication Date:
Dec 31, 1990
Product Type:
Technical Report
Report Number:
INFN-TC-90-12
Reference Number:
SCA: 440104; PA: AIX-23:008924; SN: 92000619771
Resource Relation:
Other Information: PBD: 1990
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; SI SEMICONDUCTOR DETECTORS; ION IMPLANTATION; CALIBRATION; DIFFUSION; PASSIVATION; 440104; HIGH ENERGY PHYSICS INSTRUMENTATION
OSTI ID:
10104128
Research Organizations:
Istituto Nazionale di Fisica Nucleare, Rome (Italy)
Country of Origin:
Italy
Language:
English
Other Identifying Numbers:
Other: ON: DE92612956; TRN: IT9100100008924
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
INIS
Size:
20 p.
Announcement Date:
Jun 30, 2005

Citation Formats

Gervino, G, Boero, M, Manfredotti, C, Icardi, M, Gabutti, A, Bagnolatti, E, and Monticone, E. Study on Silicon detectors. Italy: N. p., 1990. Web.
Gervino, G, Boero, M, Manfredotti, C, Icardi, M, Gabutti, A, Bagnolatti, E, & Monticone, E. Study on Silicon detectors. Italy.
Gervino, G, Boero, M, Manfredotti, C, Icardi, M, Gabutti, A, Bagnolatti, E, and Monticone, E. 1990. "Study on Silicon detectors." Italy.
@misc{etde_10104128,
title = {Study on Silicon detectors}
author = {Gervino, G, Boero, M, Manfredotti, C, Icardi, M, Gabutti, A, Bagnolatti, E, and Monticone, E}
abstractNote = {Prototypes of Silicon microstrip detectors and Silicon large area detectors (3x2 cm{sup 2}), realized directly by our group, either by ion implantation or by diffusion are presented. The physical detector characteristics and their performances determined by exposing them to different radioactive sources and the results of extensive tests on passivation, where new technological ways have been investigated, are discussed. The calculation of the different terms contributing to the total dark current is reported.}
place = {Italy}
year = {1990}
month = {Dec}
}