Abstract
Prototypes of Silicon microstrip detectors and Silicon large area detectors (3x2 cm{sup 2}), realized directly by our group, either by ion implantation or by diffusion are presented. The physical detector characteristics and their performances determined by exposing them to different radioactive sources and the results of extensive tests on passivation, where new technological ways have been investigated, are discussed. The calculation of the different terms contributing to the total dark current is reported.
Gervino, G;
Boero, M;
Manfredotti, C;
[1]
Icardi, M;
[2]
Gabutti, A;
Bagnolatti, E;
[3]
Monticone, E
[4]
- Istituto Nazionale di Fisica Nucleare, Milan (Italy)
- Ansaldo SpA, Genoa (Italy)
- Argonne National Lab., IL (United States)
- Istituto Elettrotecnico Nazionale, Turin (Italy)
Citation Formats
Gervino, G, Boero, M, Manfredotti, C, Icardi, M, Gabutti, A, Bagnolatti, E, and Monticone, E.
Study on Silicon detectors.
Italy: N. p.,
1990.
Web.
Gervino, G, Boero, M, Manfredotti, C, Icardi, M, Gabutti, A, Bagnolatti, E, & Monticone, E.
Study on Silicon detectors.
Italy.
Gervino, G, Boero, M, Manfredotti, C, Icardi, M, Gabutti, A, Bagnolatti, E, and Monticone, E.
1990.
"Study on Silicon detectors."
Italy.
@misc{etde_10104128,
title = {Study on Silicon detectors}
author = {Gervino, G, Boero, M, Manfredotti, C, Icardi, M, Gabutti, A, Bagnolatti, E, and Monticone, E}
abstractNote = {Prototypes of Silicon microstrip detectors and Silicon large area detectors (3x2 cm{sup 2}), realized directly by our group, either by ion implantation or by diffusion are presented. The physical detector characteristics and their performances determined by exposing them to different radioactive sources and the results of extensive tests on passivation, where new technological ways have been investigated, are discussed. The calculation of the different terms contributing to the total dark current is reported.}
place = {Italy}
year = {1990}
month = {Dec}
}
title = {Study on Silicon detectors}
author = {Gervino, G, Boero, M, Manfredotti, C, Icardi, M, Gabutti, A, Bagnolatti, E, and Monticone, E}
abstractNote = {Prototypes of Silicon microstrip detectors and Silicon large area detectors (3x2 cm{sup 2}), realized directly by our group, either by ion implantation or by diffusion are presented. The physical detector characteristics and their performances determined by exposing them to different radioactive sources and the results of extensive tests on passivation, where new technological ways have been investigated, are discussed. The calculation of the different terms contributing to the total dark current is reported.}
place = {Italy}
year = {1990}
month = {Dec}
}