You need JavaScript to view this

Electronic properties of semiconductor heterostructures

Abstract

Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs.
Authors:
Publication Date:
Feb 01, 1991
Product Type:
Thesis/Dissertation
Report Number:
NEI-NO-188
Reference Number:
SCA: 665100; PA: AIX-23:010353; SN: 92000620054
Resource Relation:
Other Information: DN: Reprints of ten previously printed papers are attached.; TH: Thesis (Dr. Ing.).; PBD: Feb 1991
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; SEMICONDUCTOR MATERIALS; ELECTRICAL PROPERTIES; EXCHANGE INTERACTIONS; INTERFACES; BAND THEORY; EFFECTIVE MASS; EXCITONS; HAMILTONIANS; IMPURITIES; SUPERLATTICES; 665100; NUCLEAR TECHNIQUES IN CONDENSED MATTER PHYSICS
OSTI ID:
10104075
Research Organizations:
Trondheim Univ. (Norway). Norges Tekniske Hoegskole
Country of Origin:
Norway
Language:
English
Other Identifying Numbers:
Other: ON: DE92613238; TRN: NO9100138010353
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
NWN
Size:
250 p.
Announcement Date:
Jun 30, 2005

Citation Formats

Einevoll, G T. Electronic properties of semiconductor heterostructures. Norway: N. p., 1991. Web.
Einevoll, G T. Electronic properties of semiconductor heterostructures. Norway.
Einevoll, G T. 1991. "Electronic properties of semiconductor heterostructures." Norway.
@misc{etde_10104075,
title = {Electronic properties of semiconductor heterostructures}
author = {Einevoll, G T}
abstractNote = {Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs.}
place = {Norway}
year = {1991}
month = {Feb}
}