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The device for bunch selffocussing

Technical Report:

Abstract

The new device for damping the longitudinal single bunch instability in atotage rings is proposed. This simple device is the dielectric channel insert of definite length in vacuum chamber. The structure of wake fields, induced by intense bunch in such a channel is that, that backward action on bunch particles not leads to bunch selffocusing. The conditions under which this phenomenon reveals itself and can be applied to electron-positron storages are considered. 3 refs.
Publication Date:
Dec 31, 1990
Product Type:
Technical Report
Report Number:
IYaF-90-28
Reference Number:
SCA: 430400; PA: AIX-23:005476; SN: 91000615808
Resource Relation:
Other Information: PBD: 1990
Subject:
43 PARTICLE ACCELERATORS; STORAGE RINGS; BEAM BUNCHING; ANALYTICAL SOLUTION; ELECTRIC FIELDS; ELECTRIC IMPEDANCE; SPATIAL DISTRIBUTION; 430400
OSTI ID:
10102458
Research Organizations:
AN SSSR, Novosibirsk (Russian Federation). Inst. Yadernoj Fiziki
Country of Origin:
USSR
Language:
English
Other Identifying Numbers:
Other: ON: DE92611807; TRN: SU9108177005476
Availability:
OSTI; NTIS (US Sales Only); INIS
Submitting Site:
INIS
Size:
14 p.
Announcement Date:
Jun 30, 2005

Technical Report:

Citation Formats

Burov, A V, and Novokhatskij, A V. The device for bunch selffocussing. USSR: N. p., 1990. Web.
Burov, A V, & Novokhatskij, A V. The device for bunch selffocussing. USSR.
Burov, A V, and Novokhatskij, A V. 1990. "The device for bunch selffocussing." USSR.
@misc{etde_10102458,
title = {The device for bunch selffocussing}
author = {Burov, A V, and Novokhatskij, A V}
abstractNote = {The new device for damping the longitudinal single bunch instability in atotage rings is proposed. This simple device is the dielectric channel insert of definite length in vacuum chamber. The structure of wake fields, induced by intense bunch in such a channel is that, that backward action on bunch particles not leads to bunch selffocusing. The conditions under which this phenomenon reveals itself and can be applied to electron-positron storages are considered. 3 refs.}
place = {USSR}
year = {1990}
month = {Dec}
}