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GaN monocrystals preparation for substrates of epitaxy MBE and MOCVD

Journal Article:

Abstract

The possibility of growing of AlN, GaN and InN crystals at high pressure of N has been analysed. Thermodynamical properties and its consequences for crystals growth have been shortly discussed on the basis of the results of high pressure experiments up to 20 kbar. At this pressure range the best results have been obtained for GaN. AlN requires higher temperatures to increase the solubility of N in the liquid Al. For InN the pressure of 20 kbar is not sufficient for effective crystallization. 21 refs, 6 figs, 1 tab.
Authors:
Porowski, S [1] 
  1. Polska Akademia Nauk, Warsaw (Poland)
Publication Date:
Dec 31, 1994
Product Type:
Journal Article
Report Number:
CONF-9401120-
Reference Number:
SCA: 360202; 360204; PA: AIX-26:062696; EDB-95:130515; SN: 95001457760
Resource Relation:
Journal Name: Prace ITME; Journal Issue: 42; Conference: Seminar of the Polishy State Committee for Scientific Research on material engineering-electronic materials, Seminarium KBN: Inzynieria materialowa - materialy elektroniczne, Warsaw (Poland), Jan 1994; Other Information: PBD: 1994
Subject:
36 MATERIALS SCIENCE; INDIUM NITRIDES; MONOCRYSTALS; CRYSTAL GROWTH; THERMODYNAMIC PROPERTIES; EPITAXY; MEETINGS; VERY HIGH PRESSURE
OSTI ID:
100478
Country of Origin:
Poland
Language:
English
Other Identifying Numbers:
Journal ID: PRITED; Other: CNN: KBN Grant No. 3-P407-036-05; TRN: PL9500308062696
Submitting Site:
PLN
Size:
pp. 24-31
Announcement Date:
Oct 04, 1995

Journal Article:

Citation Formats

Porowski, S. GaN monocrystals preparation for substrates of epitaxy MBE and MOCVD. Poland: N. p., 1994. Web.
Porowski, S. GaN monocrystals preparation for substrates of epitaxy MBE and MOCVD. Poland.
Porowski, S. 1994. "GaN monocrystals preparation for substrates of epitaxy MBE and MOCVD." Poland.
@misc{etde_100478,
title = {GaN monocrystals preparation for substrates of epitaxy MBE and MOCVD}
author = {Porowski, S}
abstractNote = {The possibility of growing of AlN, GaN and InN crystals at high pressure of N has been analysed. Thermodynamical properties and its consequences for crystals growth have been shortly discussed on the basis of the results of high pressure experiments up to 20 kbar. At this pressure range the best results have been obtained for GaN. AlN requires higher temperatures to increase the solubility of N in the liquid Al. For InN the pressure of 20 kbar is not sufficient for effective crystallization. 21 refs, 6 figs, 1 tab.}
journal = {Prace ITME}
issue = {42}
journal type = {AC}
place = {Poland}
year = {1994}
month = {Dec}
}