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	       <dc:title>Development of thin-film solar cells based on amorphous silicon. Entwicklung von Duennschicht-Solarzellen auf der Basis von amorphem Silizium</dc:title>
	       <dc:creator>Mueller, G; Winterling, G</dc:creator>
	       <dc:subject>14 SOLAR ENERGY; SILICON SOLAR CELLS; DESIGN; SILICON; AMORPHOUS STATE; CRYSTAL STRUCTURE; DECOMPOSITION; ECONOMICS; EFFICIENCY; HIGH-FREQUENCY DISCHARGES; MANUFACTURING; MECHANICAL PROPERTIES; PHYSICAL PROPERTIES; PLASMA; SEMICONDUCTOR MATERIALS; SERVICE LIFE; STABILITY; TESTING; THIN FILMS; CHEMICAL REACTIONS; DIRECT ENERGY CONVERTERS; ELECTRIC DISCHARGES; ELEMENTS; EQUIPMENT; FILMS; MATERIALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMIMETALS; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion</dc:subject>
	       <dc:subjectRelated></dc:subjectRelated>
	       <dc:description>This project was aimed to develop a-Si solar cells with an improved efficiency and to determine the characteristics of these cells. Mainly cells with p-i-n-structure were deposited by decomposition of SiH/sub 4/ in a radio-frequency glow discharge. The main results are: SS/p-i-n/ITO cells having 5% AM-1 efficiency at an area of 16 cm/sup 2/; glass/SnO/sub 2//p-i-n/Al cells with areas < 1 cm/sup 2/ having AM-1 efficiencies up to 6%. The cell stability under prolonged illumination was found to depend on firstly the deposition conditions of the a-Si:H material and secondly on whether the light is entering through the p/sup +/- or n/sup +/ layer. Cells with an initial efficiency of 4.5% suffered a decrease of efficiency to 0.94 of its initial value after 400 hours of AM-1 illumination. The cells developed in this project possess properties sufficient to provide power for small-scale applications such as in pocket calculations. However, more progress is needed in efficiency, long-time stability and a-Si deposition rate before a-Si cells become economically useful for power applications.</dc:description>
	       <dcq:publisher></dcq:publisher>
	       <dcq:publisherResearch>Bundesministerium fuer Forschung und Technologie, Bonn (Germany, F.R.)</dcq:publisherResearch>
	       <dcq:publisherAvailability>NTIS (US Sales Only), PC A04/MF A01; 1.</dcq:publisherAvailability>
	       <dcq:publisherSponsor></dcq:publisherSponsor>
	       <dcq:publisherCountry>Germany</dcq:publisherCountry>
		   <dc:contributingOrganizations></dc:contributingOrganizations>
	       <dc:date>1985-08-01</dc:date>
	       <dc:language>German</dc:language>
	       <dc:type>Technical Report</dc:type>
	       <dcq:typeQualifier></dcq:typeQualifier>
	       <dc:relation>Other Information: Portions of this document are illegible in microfiche products. With 21 refs., 1 tab., 39 figs</dc:relation>
	       <dc:coverage></dc:coverage>
	       <dc:format>Medium: X; Size: Pages: 72</dc:format>
	       <dc:doi>https://doi.org/</dc:doi>
	       <dc:identifier>ON: DE86750498</dc:identifier>
		   <dc:journalName>[]</dc:journalName>
		   <dc:journalIssue></dc:journalIssue>
		   <dc:journalVolume></dc:journalVolume>
	       <dc:identifierReport>BMFT-FB-T-85-096</dc:identifierReport>
	       <dcq:identifierDOEcontract></dcq:identifierDOEcontract>
	       <dc:identifierOther>Other: ON: DE86750498</dc:identifierOther>
	       <dc:source>DE; FRG-84-11397; ERA-11-007097; EDB-86-008340</dc:source>
	       <dc:rights></dc:rights>
	       <dc:dateEntry>2013-03-14</dc:dateEntry>
	       <dc:dateAdded></dc:dateAdded>
	       <dc:ostiId>7809357</dc:ostiId>
	       <dcq:identifier-purl></dcq:identifier-purl>
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