Co-doping effects of Mg and Be on properties of ZnMgBeGaO UV-range transparent conductive oxide films prepared by RF magnetron sputtering Park, Jang-Ho; Cuong, Hoang Ba [Photonic and Electronic Thin Film Laboratory, Department of Materials Science and Engineering, Chonnam National University, 300, Yong-bong dong, Gwangju 500-757 (Korea, Republic of)]; Jeong, Sang-Hun [Gwangju Center, Korea Basic Science Institute, 300, Yong-bong dong, Gwangju 500-757 (Korea, Republic of)]; Lee, Byung-Teak [Photonic and Electronic Thin Film Laboratory, Department of Materials Science and Engineering, Chonnam National University, 300, Yong-bong dong, Gwangju 500-757 (Korea, Republic of)] 36 MATERIALS SCIENCE; ANNEALING; BERYLLIUM COMPOUNDS; CONCENTRATION RATIO; CORRELATIONS; CRYSTALS; DOPED MATERIALS; FILMS; GALLIUM COMPOUNDS; MAGNESIUM COMPOUNDS; MAGNETRONS; MIXTURES; OXYGEN COMPOUNDS; SPUTTERING; ULTRAVIOLET RADIATION; WAVELENGTHS; X-RAY DIFFRACTION; ZINC COMPOUNDS; ZINC OXIDES Highlights: • Zn{sub 0.96−x−y}Mg{sub x}Be{sub y}Ga{sub 0.04}O TCO films with wide band-gap were prepared by sputtering. • Controlling of band-gap and conductivity was tried by co-doping Mg and Be. • Maximum band-gap energy reached 3.88 eV at 5 at.% Mg and 10 at.% Be contents. • Post-growth annealing was performed in Ar + H{sub 2} ambient gas to improve conductivity. • The lowest resistivity was obtained from the annealed film at 400 °C. - Abstract: In this work, the Zn{sub 0.96-x−y}Mg{sub x}Be{sub y}Ga{sub 0.04}O films co-doped with different Mg and Be doping levels of 3 ∼10 at.% were prepared using an RF magnetron sputtering, and the correlation between the film properties and the doping levels was investigated. With an increase in Mg or Be doping level, the film crystal quality gradually deteriorated and the ZnO c-axis parameter was contracted or expanded due to the difference in ionic radii of Mg and Be ions, resulting in the shift of the ZnO (0 0 0 2) XRD peak position to lower 2θ or higher 2θ values and the broadening of the ZnO (0 0 0 2) XRD peak. All the grown films were highly transparent with a transmittance above 85% in the visible wavelength region and the band-gap widened from 3.74 eV to 3.88 eV at high doping level of 5 at.% Mg and 10 at.% Be, whereas the resistivity was degraded from 1.6 × 10{sup −3} Ω cm at low doping level to 1–4 × 10{sup −1} Ω cm at high doping level. In the Zn{sub 0.88}Mg{sub 0.05}Be{sub 0.03}Ga{sub 0.04}O film post growth annealed at 400 °C in Ar + H{sub 2} mixture ambient, the lowest resistivity of 8.17 × 10{sup −4} Ω cm, the highest electron concentration of 5.26 × 10{sup 20} cm{sup −3}, and the large band-gap of 3.8 eV were obtained, which is attributed to the hydrogen incorporation in film during annealing and the improved film crystal quality. Available from http://dx.doi.org/10.1016/j.jallcom.2014.06.148 Netherlands 2014-12-05 English Journal Article Journal Name: Journal of Alloys and Compounds; Journal Volume: 615; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA) Medium: X; Size: page(s) 126-130 https://doi.org/10.1016/J.JALLCOM.2014.06.148 PII: S0925-8388(14)01504-7 [] 615 Journal ID: ISSN 0925-8388; CODEN: JALCEU; Other: PII: S0925-8388(14)01504-7; TRN: NL15R7245008413 NLN 2016-03-07 22438879