The conducting tin oxide thin films deposited via atomic layer deposition using Tetrakis-dimethylamino tin and peroxide for transparent flexible electronics Choi, Dong-won [Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791 (Korea, Republic of)]; Maeng, W. J. [Department of Materials Science and Engineering, University of Wisconsin Madison, Madison, WI 53706 (United States)]; Park, Jin-Seong [Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791 (Korea, Republic of)] 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; CHEMICAL BONDS; DEPOSITION; DEPOSITS; ELECTRICAL PROPERTIES; ELECTRONIC STRUCTURE; HYDROGEN PEROXIDE; OPTICAL PROPERTIES; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TIN; TIN OXIDES Highlights: • Highly-conducting SnO{sub 2} thin films have been deposited by tetrakis(dimethylamino)tin and hydrogen peroxide on low deposition temperatures. • Impurity-free SnO{sub 2} film exhibited very low resistivity (9.7 × 10{sup −4} Ω cm) at 200 °C, and high carrier mobility (22 cm{sup 2}/V sec). • High transparent SnO{sub 2} film (over 80%) can be successfully deposited on flexible poly-imide (CPI) substrates. - Abstract: The ALD SnO{sub 2} thin films were investigated as a function of growth temperature to obtain optimized process and film properties using tetrakis(dimethylamino)tin as a Sn precursor, and hydrogen peroxide as reactant. The film growth shows 1.2 Å/cycle in the 100–200 °C temperature range and follows typical ALD window behavior. ALD SnO{sub 2} thin films show low resistivity (9.7 × 10{sup −4} Ω cm) at 200 °C, and high carrier mobility (22 cm{sup 2}/V sec). The transmittance of 40 nm ALD SnO{sub 2} films was over 80% at all of temperatures. The growth behavior, film composition, chemical bonding states, film crystallinity, electronic structure, and optical properties were investigated in order to verify the origin of the electrical properties as a function of growth temperature. These data show that the favorable properties of ALD SnO{sub 2} are due to the electronic band structure change associated with poly-crystalline formation. Available from http://dx.doi.org/10.1016/j.apsusc.2014.06.027 Netherlands 2014-09-15 English Journal Article Journal Name: Applied Surface Science; Journal Volume: 313; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA) Medium: X; Size: page(s) 585-590 https://doi.org/10.1016/J.APSUSC.2014.06.027 PII: S0169-4332(14)01298-7 [] 313 Journal ID: ISSN 0169-4332; CODEN: ASUSEE; Other: PII: S0169-4332(14)01298-7; TRN: NL15R5362106828 NLN 2015-11-11 22401071