Erratum: “Tunable photoluminescence of self-assembled GeSi quantum dots by B{sup +} implantation and rapid thermal annealing” [J. Appl. Phys. 115, 233502 (2014)] Chen, Yulu; Wu, Shan; Ma, Yinjie; Fan, Yongliang; Yang, Xinju; Zhong, Zhenyang; Jiang, Zuimin [National Key Laboratory for Surface Physics and Department of Physics, Fudan University, Shanghai 200433 (China)] 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; BORON IONS; GERMANIUM SILICIDES; ION IMPLANTATION; PHOTOLUMINESCENCE; QUANTUM DOTS No abstract prepared. United States 2014-09-14 English Journal Article Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA) Medium: X; Size: page(s) 109902-109902.1 https://doi.org/10.1063/1.4895492 [] 10 116 Journal ID: ISSN 0021-8979; CODEN: JAPIAU; TRN: US14B2359012151 USN 2015-02-16 22305978