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	       <dc:title>Fabrication and characterization of bit-patterned media beyond 1.5 Tbit/in{sup 2}</dc:title>
	       <dc:creator>Yang, Joel K W; Huigao, Duan; Hui, Hui Kim [Institute of Materials Research and Engineering, A-STAR, 3 Research Link, 117602 (Singapore)]; Yunjie, Chen; Tianli, Huang; Leong, Siang Huei [Data Storage Institute, A-STAR, 5 Engineering Drive, 117608 (Singapore)]; Thiyagarajah, Naganivetha; Ng, Vivian [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117576 (Singapore)]</dc:creator>
	       <dc:subject>77 NANOSCIENCE AND NANOTECHNOLOGY; ATOMIC FORCE MICROSCOPY; DENSITY; DEPOSITION; ELECTRON BEAMS; FABRICATION; FILMS; MAGNETIC FIELDS; MANUFACTURING; NANOSTRUCTURES; RESOLUTION; BEAMS; LEPTON BEAMS; MICROSCOPY; PARTICLE BEAMS; PHYSICAL PROPERTIES</dc:subject>
	       <dc:subjectRelated>BEAMS; LEPTON BEAMS; MICROSCOPY; PARTICLE BEAMS; PHYSICAL PROPERTIES</dc:subjectRelated>
	       <dc:description>We fabricated bit-patterned media (BPM) at densities as high as 3.3 Tbit/in{sup 2} using a process consisting of high-resolution electron-beam lithography followed directly by magnetic film deposition. By avoiding pattern transfer processes such as etching and liftoff that inherently reduce pattern fidelity, the resolution of the final pattern was kept close to that of the lithographic step. Magnetic force microscopy (MFM) showed magnetic isolation of the patterned bits at 1.9 Tbit/in{sup 2}, which was close to the resolution limit of the MFM. The method presented will enable studies on magnetic bits packed at ultra-high densities, and can be combined with other scalable patterning methods such as templated self-assembly and nanoimprint lithography for high-volume manufacturing.</dc:description>
	       <dcq:publisher></dcq:publisher>
	       <dcq:publisherResearch></dcq:publisherResearch>
	       <dcq:publisherAvailability>Available from http://dx.doi.org/10.1088/0957-4484/22/38/385301</dcq:publisherAvailability>
	       <dcq:publisherSponsor></dcq:publisherSponsor>
	       <dcq:publisherCountry>United Kingdom</dcq:publisherCountry>
		   <dc:contributingOrganizations></dc:contributingOrganizations>
	       <dc:date>2011-09-23</dc:date>
	       <dc:language>English</dc:language>
	       <dc:type>Journal Article</dc:type>
	       <dcq:typeQualifier></dcq:typeQualifier>
	       <dc:relation>Journal Name: Nanotechnology (Print); Journal Volume: 22; Journal Issue: 38; Other Information: DOI: 10.1088/0957-4484/22/38/385301; PII: S0957-4484(11)96928-1</dc:relation>
	       <dc:coverage></dc:coverage>
	       <dc:format>Medium: X; Size: 6 pages</dc:format>
	       <dc:doi>https://doi.org/10.1088/0957-4484/22/38/385301</dc:doi>
	       <dc:identifier></dc:identifier>
		   <dc:journalName>[]</dc:journalName>
		   <dc:journalIssue>38</dc:journalIssue>
		   <dc:journalVolume>22</dc:journalVolume>
	       <dc:identifierReport></dc:identifierReport>
	       <dcq:identifierDOEcontract></dcq:identifierDOEcontract>
	       <dc:identifierOther>Journal ID: ISSN 0957-4484; TRN: GB12O2713026453</dc:identifierOther>
	       <dc:source>GBN</dc:source>
	       <dc:rights></dc:rights>
	       <dc:dateEntry>2012-12-10</dc:dateEntry>
	       <dc:dateAdded></dc:dateAdded>
	       <dc:ostiId>21548347</dc:ostiId>
	       <dcq:identifier-purl></dcq:identifier-purl>
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