Roughness evolution in thin-film growth of SiO{sub 2} and Nb{sub 2}O{sub 5} Elsholz, F; Schoell, E; Scharfenorth, C; Seewald, G; Eichler, H J; Rosenfeld, A [Technische Universitaet Berlin, Institut fuer Theoretische Physik, Hardenbergstrasse 36, D-10623 Berlin (Germany)]; Technische Universitaet Berlin, Optisches Institut, Hardenbergstrasse 36, D-10623 Berlin (Germany); Max-Born-Institut, Max-Born-Strasse 2a, 12489 Berlin (Germany)] 36 MATERIALS SCIENCE; AMORPHOUS STATE; ATOMIC FORCE MICROSCOPY; CORRELATIONS; CRYSTAL GROWTH; DIELECTRIC MATERIALS; GLASS; NIOBIUM OXIDES; ROUGHNESS; SILICON OXIDES; SPUTTERING; STATISTICAL DATA; SUBSTRATES; SURFACE COATING; SURFACES; THIN FILMS We investigate the amorphous thin-film growth of SiO{sub 2} and Nb{sub 2}O{sub 5} on glass substrates and quantify the roughness of the film surface by means of a statistical data analysis of atomic force microscopy images. We determine the absolute root-mean-square roughness, the effective growth exponent {beta}, the local roughness exponent {alpha}, and the evolution of the lateral correlation length {xi}{sub a} for dual magnetron sputter-deposited thin films. United States 2005-11-15 English Journal Article Journal Name: Journal of Applied Physics; Journal Volume: 98; Journal Issue: 10; Other Information: DOI: 10.1063/1.2130521; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA) Medium: X; Size: page(s) 103516-103516.7 https://doi.org/10.1063/1.2130521 [] 10 98 Journal ID: ISSN 0021-8979; JAPIAU; TRN: US06A8929032065 INIS 2010-06-03 20719802