%A"Pruniaux, B [Commissariat a l'Energie Atomique, 38 - Grenoble (France). Centre d'Etudes Nucleaires]" %D1967 %I; CEA Grenoble, 38 (France); Faculte des Sciences de l'Universite de Grenoble, 38 (France) %2 %J[] %K75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY, ACCURACY, ALUMINIUM, ALUMINIUM OXIDES, CAPACITORS, ELECTRIC CONDUCTIVITY, TEMPERATURE DEPENDENCE, THICKNESS, THIN FILMS, VACUUM EVAPORATION %PMedium: ED; Size: 43 pages %TProduction and study of mixed Al-Al{sub 2}O{sub 3} thin films for passive electronic circuits; Realisation et etude des couches minces mixtes Al-Al{sub 2}O{sub 3} pour circuits electroniques passifs %XA new vacuum deposition process, named reactive evaporation, is used to realize passive thin film circuits. Using aluminium, oxidized at various steps in its vapor phase, we obtain: - Al-Al{sub 2}O{sub 3} cermet resistors (R{sub {open_square}} = 10000 {omega}{sub {open_square}}, CTR <{+-} 150 ppm/deg. C) which show oscillations of the resistivity versus the thickness of the layer, in distinction to classical theory. - Al{sub 2}O{sub 3} capacitors (C{sub {open_square}} = 60000 pf/cm{sup 2}, tg {delta} < 0.5 per cent). These thin film components present good electrical behaviour and should find interesting applications in integrated circuits. (author) [French] Une nouvelle technique de depot sous vide, l'evaporation reactive est utilisee pour realiser des circuits passifs en couches minces. En oxydant, en phase vapeur, de l'aluminium a differents degres, on obtient: - des resistances en cermet Al-Al{sub 2}O{sub 3} (R{sub {open_square}} = 10000 {omega}{sub {open_square}}, CTR <{+-} 150 ppm) dont Ia resistivite oscille en fonction de l'epaisseur, contrairement aux previsions de la theorie classique. - Des capacites en Al{sub 2}O{sub 3} (C{sub {open_square}} = 60000 pf/cm{sup 2}, tg {delta} < 0.5 pour cent). Ces elements presentent de bonnes caracteristiques electriques et seraient avantageusement utilises en circuits integres. (auteur) %0Thesis/Dissertation %NCEA-R-3120;TRN: FR05R3120069321 %1 %CFrance %Rhttps://doi.org/ TRN: FR05R3120069321 FRN %GFrench