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	       <dc:title>Growth of LiMn{sub 2}O{sub 4} thin films by pulsed-laser deposition and their electrochemical properties in lithium microbatteries</dc:title>
	       <dc:creator>Julien, C [Univ. Pierre et Marie Curie, Paris (France). LMDH]; Haro-Poniatowski, E [Laboratorio de Optica Cuantica, Universidad Autonoma Metropolitana Iztapalapa, Apdo. Postal 55-534, Mexico (Mexico)]; Camacho-Lopez, M A [LMDH, UMR 7603, Universite Pierre et Marie Curie, 4 place Jussieu, 75252, Paris (France)]; Escobar-Alarcon, L [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, Mexico (Mexico)]; Jimenez-Jarquin, J [Laboratorio de Optica Cuantica, Universidad Autonoma Metropolitana Iztapalapa, Apdo. Postal 55-534, Mexico (Mexico)]</dc:creator>
	       <dc:subject>36 MATERIALS SCIENCE; LITHIUM COMPOUNDS; THIN FILMS; ELECTROCHEMISTRY; CRYSTAL STRUCTURE; SCANNING ELECTRON MICROSCOPY; RAMAN SPECTRA; TEXTURE; CLATHRATES; ELECTRIC BATTERIES; BACKSCATTERING; X-RAY DIFFRACTION; VOLTAMETRY; SURFACES; TOPOGRAPHY</dc:subject>
	       <dc:subjectRelated></dc:subjectRelated>
	       <dc:description>Films of LiMn{sub 2}O{sub 4} were grown by pulsed-laser deposition (PLD) onto silicon wafers using sintered targets which consisted in the mixture of LiMn{sub 2}O{sub 4} and Li{sub 2}O powders. The film formation has been studied as a function of the preparation conditions, i.e. composition of the target, substrate temperature, and oxygen partial pressure in the deposition chamber. Composition, morphology and structural properties of PLD films have been investigated using Rutherford backscattering spectroscopy, scanning electron microscopy, X-ray diffraction and Raman scattering spectroscopy. The films deposited from target LiMn{sub 2}O{sub 4}+15% Li{sub 2}O have an excellent crystallinity when deposited onto silicon substrate maintained at 300 C in an oxygen partial pressure of 100 mTorr. It is found that such a film crystallizes in the spinel structure (Fd3m symmetry) as evidenced by X-ray diffraction. Well-textured polycrystalline films exhibit crystallite size of 300 nm. Pulsed-laser deposited LiMn{sub 2}O{sub 4} thin films obtained with a polycrystalline morphology were successfully used as cathode materials in lithium microbatteries. The Li//LiMn{sub 2}O{sub 4} thin film cells have been tested by cyclic voltammetry and galvanostatic charge-discharge techniques in the potential range 3.0-4.2 V. Specific capacity as high as 120 mC/cm{sup 2} {mu}m was measured on polycrystalline films. The chemical diffusion coefficients for the Li{sub x}Mn{sub 2}O{sub 4} thin films appear to be in the range of 10{sup -11}-10{sup -12} cm{sup 2}/s. Electrochemical measurements show a good cycleability of PLD films when cells are charged-discharged at current densities of 5-25 {mu}A/cm{sup 2}. (orig.)</dc:description>
	       <dcq:publisher></dcq:publisher>
	       <dcq:publisherResearch></dcq:publisherResearch>
	       <dcq:publisherAvailability></dcq:publisherAvailability>
	       <dcq:publisherSponsor></dcq:publisherSponsor>
	       <dcq:publisherCountry>Switzerland</dcq:publisherCountry>
		   <dc:contributingOrganizations></dc:contributingOrganizations>
	       <dc:date>2000-03-01</dc:date>
	       <dc:language>English</dc:language>
	       <dc:type>Journal Article</dc:type>
	       <dcq:typeQualifier></dcq:typeQualifier>
	       <dc:relation>Journal Name: Materials Science and Engineering. B, Solid-State Materials for Advanced Technology; Journal Volume: 72; Journal Issue: 1; Other Information: 31 refs.; PBD: 1 Mar 2000</dc:relation>
	       <dc:coverage></dc:coverage>
	       <dc:format>Medium: X; Size: page(s) 36-46</dc:format>
	       <dc:doi>https://doi.org/10.1016/S0921-5107(99)00598-X</dc:doi>
	       <dc:identifier></dc:identifier>
		   <dc:journalName>[]</dc:journalName>
		   <dc:journalIssue>1</dc:journalIssue>
		   <dc:journalVolume>72</dc:journalVolume>
	       <dc:identifierReport></dc:identifierReport>
	       <dcq:identifierDOEcontract></dcq:identifierDOEcontract>
	       <dc:identifierOther>Journal ID: ISSN 0921-5107; MSBTEK; TRN: CH00G5682</dc:identifierOther>
	       <dc:source>CHF; EDB-00:048102</dc:source>
	       <dc:rights></dc:rights>
	       <dc:dateEntry>2010-12-30</dc:dateEntry>
	       <dc:dateAdded></dc:dateAdded>
	       <dc:ostiId>20053724</dc:ostiId>
	       <dcq:identifier-purl></dcq:identifier-purl>
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