On the estimation of matrix elements for optical transitions in semiconductors
Hassan, A R
74 ATOMIC AND MOLECULAR PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; SEMICONDUCTOR MATERIALS; ENERGY-LEVEL TRANSITIONS; BAND THEORY; CADMIUM SULFIDES; GALLIUM NITRIDES; GALLIUM PHOSPHIDES; GALLIUM SULFIDES; MATRIX ELEMENTS; PERTURBATION THEORY; ZINC OXIDES; ZINC SELENIDES; 664200; 665000; SPECTRA OF ATOMS AND MOLECULES AND THEIR INTERACTIONS WITH PHOTONS; PHYSICS OF CONDENSED MATTER
A semi-empirical method is used to calculate the numerical values of the interband momentum matrix elements of the allowed optical transitions in semiconductors. This method is based on the evaluation of the ratio of the two-photon and one-photon absorption coefficients and the compare the result with the corresponding experimental values in a number of semiconductors both for direct and indirect transition processes. The numerical values of the momentum matrix elements are compared with the convenient theoretical calculations available. The result is found to agree fairly well with the corresponding values computed using the k-vector {center_dot} p-vector perturbation theory. (author). 19 refs, 2 figs, 2 tabs.
International Centre for Theoretical Physics (ICTP), Trieste (Italy)
OSTI; NTIS (US Sales Only); INIS
IAEA
1992-09-01
English
Technical Report
Other Information: PBD: Sep 1992
Medium: X; Size: [12] p.
ON: DE93613550
IC-92/221
Other: ON: DE93613550; TRN: XA9233068009148
INIS; SCA: 664200; 665000; PA: AIX-24:009148; SN: 93000933552
2008-02-12
10119799