TY - RPRT TI - Phase transition in IV-VI compound semiconductors at high pressures AB - The high pressure phase transitions, the equation of state and associated volume collapses of IV - VI compound semiconductors have been analysed by means of a three-body potential (TBP) model approach. The charge-transfer effects, arising from the overlapping or deformation of the electron shells of the adjacent ions leading to the many-body (three-body) interactions, are included explicitly in the crystal potential. The TBP model explains successfully the large Cauchy-discrepancy in these IV-VI semiconductors. The agreement between the present theoretical and available experimental values on the phase transition pressures (P{sub t} = 196, 148, 108 and 226 kbar), cohesive energy and lattice parameters are in reasonably good agreement in almost all the materials under consideration. The charge-transfer effect shows an appreciable influence on the phase transition properties of these materials. (author). 23 refs, 4 figs, 3 tabs. AU - "Gupta, D C [International Centre for Theoretical Physics, Trieste (Italy)]" AU - "Singh, R K [Barkatullah, Univ., Bhopal (India). School of Physics]" KW - "75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY" KW - "LEAD SELENIDES" KW - "PHASE TRANSFORMATIONS" KW - "LEAD SULFIDES" KW - "LEAD TELLURIDES" KW - "SEMICONDUCTOR MATERIALS" KW - "TIN TELLURIDES" KW - "CRYSTAL FIELD" KW - "EQUATIONS OF STATE" KW - "HIGH PRESSURE" KW - "PRESSURE DEPENDENCE" KW - "THEORETICAL DATA" KW - "665000" KW - "PHYSICS OF CONDENSED MATTER" DO - https://doi.org/ UR - PB - CY - IAEA PY - 1991 DA - 1991-09-01 LA - English J2 - [] VL - C1 - International Centre for Theoretical Physics (ICTP), Trieste (Italy) C2 - C3 - IC-91/286 C4 - C5 - OSTI; NTIS (US Sales Only); INIS L3 - Other Information: PBD: Sep 1991 ER -