Method to control residual stress in a film structure and a system thereof
Abstract
A method for controlling residual stress in a structure in a MEMS device and a structure thereof includes selecting a total thickness and an overall equivalent stress for the structure. A thickness for each of at least one set of alternating first and second layers is determined to control an internal stress with respect to a neutral axis for each of the at least alternating first and second layers and to form the structure based on the selected total thickness and the selected overall equivalent stress. Each of the at least alternating first and second layers is deposited to the determined thickness for each of the at least alternating first and second layers to form the structure.
- Inventors:
-
- (Rochester, NY)
- Issue Date:
- Research Org.:
- Infotonics Tech Center
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 985541
- Patent Number(s):
- 7470462
- Application Number:
- 11/061,429
- Assignee:
- USDOE Rochester Institute of Technology (Rochester, NY)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- DOE Contract Number:
- FG02-02ER63410
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Parthum, Sr., Michael J. Method to control residual stress in a film structure and a system thereof. United States: N. p., 2008.
Web.
Parthum, Sr., Michael J. Method to control residual stress in a film structure and a system thereof. United States.
Parthum, Sr., Michael J. Tue .
"Method to control residual stress in a film structure and a system thereof". United States. https://www.osti.gov/servlets/purl/985541.
@article{osti_985541,
title = {Method to control residual stress in a film structure and a system thereof},
author = {Parthum, Sr., Michael J.},
abstractNote = {A method for controlling residual stress in a structure in a MEMS device and a structure thereof includes selecting a total thickness and an overall equivalent stress for the structure. A thickness for each of at least one set of alternating first and second layers is determined to control an internal stress with respect to a neutral axis for each of the at least alternating first and second layers and to form the structure based on the selected total thickness and the selected overall equivalent stress. Each of the at least alternating first and second layers is deposited to the determined thickness for each of the at least alternating first and second layers to form the structure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 30 00:00:00 EST 2008},
month = {Tue Dec 30 00:00:00 EST 2008}
}
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