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Title: Codoped direct-gap semiconductor scintillators

Abstract

Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

Inventors:
 [1];  [2];  [3];  [2]
+ Show Inventor Affiliations
  1. Pinole, CA
  2. Berkeley, CA
  3. Danville, CA
Issue Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
984448
Patent Number(s):
7404913
Application Number:
11/382,883
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
C - CHEMISTRY C09 - DYES C09K - MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
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DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Derenzo, Stephen Edward, Bourret-Courchesne, Edith, Weber, Marvin J, and Klintenberg, Mattias K. Codoped direct-gap semiconductor scintillators. United States: N. p., 2008. Web.
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Derenzo, Stephen Edward, Bourret-Courchesne, Edith, Weber, Marvin J, & Klintenberg, Mattias K. Codoped direct-gap semiconductor scintillators. United States.
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Derenzo, Stephen Edward, Bourret-Courchesne, Edith, Weber, Marvin J, and Klintenberg, Mattias K. Tue . "Codoped direct-gap semiconductor scintillators". United States. https://www.osti.gov/servlets/purl/984448.
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@article{osti_984448,
title = {Codoped direct-gap semiconductor scintillators},
author = {Derenzo, Stephen Edward and Bourret-Courchesne, Edith and Weber, Marvin J and Klintenberg, Mattias K},
abstractNote = {Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 29 00:00:00 EDT 2008},
month = {Tue Jul 29 00:00:00 EDT 2008}
}
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