Title: Wafer bonded epitaxial templates for silicon heterostructures

Abstract

A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

Inventors:

Atwater, Jr., Harry A. ^[1]; Zahler, James M ^[2]; Morral, Anna Fontcubera I ^[3]

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+ Show Inventor Affiliations

1. (So. Pasadena, CA)
2. Pasadena, CA
3. Paris, FR

Issue Date:

Tue Mar 11 00:00:00 EDT 2008

Research Org.:

California Institute of Technology (CalTech), Pasadena, CA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

970493

Patent Number(s):

7341927

Application Number:

11/004,808

Assignee:

California Institute of Technology (Pasadena, CA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/187 - {by direct bonding}
H01L21/30604 - {Chemical etching}
H01L21/30612 - {Etching of AIIIBV compounds}
H01L21/30625 - {With simultaneous mechanical treatment, e.g. mechanico-chemical polishing}
H01L21/76254 - {with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond}
H01L31/0392 - including thin films deposited on metallic or insulating substrates {
H01L31/18 - Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
H01L33/005 - {Processes}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/50 - Photovoltaic [PV] energy

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DOE Contract Number:  

AC36-99G010337

Resource Type:

Patent

Resource Relation:

Patent File Date: 2004 Dec 07

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE