Method for Improving Mg Doping During Group-III Nitride MOCVD

Creighton, J Randall; Wang, George T

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Title: Method for Improving Mg Doping During Group-III Nitride MOCVD

Abstract

A method for improving Mg doping of Group III-N materials grown by MOCVD preventing condensation in the gas phase or on reactor surfaces of adducts of magnesocene and ammonia by suitably heating reactor surfaces between the location of mixing of the magnesocene and ammonia reactants and the Group III-nitride surface whereon growth is to occur.

Inventors:

Creighton, J Randall ^[1]; Wang, George T ^[1]

Albuquerque, NM

Issue Date:: Tue Nov 11 00:00:00 EST 2008

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 953733

Patent Number(s):: 7449404

Application Number:: 11/115,685

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/0254 - {Nitrides}
H01L21/02579 - {P-type}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}

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DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Citation Formats


                    Creighton, J Randall, and Wang, George T. Method for Improving Mg Doping During Group-III Nitride MOCVD.  United States: N. p., 2008. 
        Web.

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                    Creighton, J Randall, & Wang, George T. Method for Improving Mg Doping During Group-III Nitride MOCVD.  United States.

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                    Creighton, J Randall, and Wang, George T. Tue .  
        "Method for Improving Mg Doping During Group-III Nitride MOCVD".  United States.  https://www.osti.gov/servlets/purl/953733.

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@article{osti_953733,

  title        = {Method for Improving Mg Doping During Group-III Nitride MOCVD},

  author       = {Creighton, J Randall and Wang, George T},

  abstractNote = {A method for improving Mg doping of Group III-N materials grown by MOCVD preventing condensation in the gas phase or on reactor surfaces of adducts of magnesocene and ammonia by suitably heating reactor surfaces between the location of mixing of the magnesocene and ammonia reactants and the Group III-nitride surface whereon growth is to occur.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Nov 11 00:00:00 EST 2008},

  month        = {Tue Nov 11 00:00:00 EST 2008}

}

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Works referenced in this record:

A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition
journal, December 1994

Ohba, Y.; Hatano, A.
Journal of Crystal Growth, Vol. 145, Issue 1-4
https://doi.org/10.1016/0022-0248(94)91053-7

Violet GaN based light emitting diodes fabricated by metal organics vapour phase epitaxy
journal, December 1997

Beaumont, B.; Haffouz, S.; Gibart, P.
Materials Science and Engineering: B, Vol. 50, Issue 1-3
https://doi.org/10.1016/S0921-5107(97)00193-1

Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
journal, January 2003

Xing, Huili; Green, Daniel S.; Yu, Haijiang
Japanese Journal of Applied Physics, Vol. 42, Issue Part 1, No. 1
https://doi.org/10.1143/JJAP.42.50

Complex Formation between Magnesocene (MgCp ₂ ) and NH ₃ : Implications for p-Type Doping of Group III Nitrides and the Mg Memory Effect
journal, June 2004

Wang, George T.; Creighton, J. Randall
The Journal of Physical Chemistry A, Vol. 108, Issue 22
https://doi.org/10.1021/jp036494e

Reproducibility of GaN and InGaN films grown in a multi-wafer rotating-disc reactor
journal, January 1997

Schurman, Matthew J.; Slagaj, Tom; Tran, Chuong
Materials Science and Engineering: B, Vol. 43, Issue 1-3
https://doi.org/10.1016/S0921-5107(96)01872-7

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Similar Records

Title: Method for Improving Mg Doping During Group-III Nitride MOCVD

Abstract

Citation Formats

A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition journal, December 1994

Violet GaN based light emitting diodes fabricated by metal organics vapour phase epitaxy journal, December 1997

Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition journal, January 2003

Complex Formation between Magnesocene (MgCp 2 ) and NH 3 : Implications for p-Type Doping of Group III Nitrides and the Mg Memory Effect journal, June 2004

Reproducibility of GaN and InGaN films grown in a multi-wafer rotating-disc reactor journal, January 1997

A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition
journal, December 1994

Violet GaN based light emitting diodes fabricated by metal organics vapour phase epitaxy
journal, December 1997

Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
journal, January 2003

Complex Formation between Magnesocene (MgCp ₂ ) and NH ₃ : Implications for p-Type Doping of Group III Nitrides and the Mg Memory Effect
journal, June 2004

Reproducibility of GaN and InGaN films grown in a multi-wafer rotating-disc reactor
journal, January 1997