Ultrahigh density ferroelectric storage and lithography by high order ferroic switching
Abstract
A method for switching the direction of polarization in a relatively small domain in a thin-film ferroelectric material whose direction of polarization is oriented normal to the surface of the material involves a step of moving an electrically-chargeable tip into contact with the surface of the ferroelectric material so that the direction of polarization in a region adjacent the tip becomes oriented in a preselected direction relative to the surface of the ferroelectric material. The tip is then pressed against the surface of the ferroelectric material so that the direction of polarization of the ferroelectric material within the area of the ferroelectric material in contact with the tip is reversed under the combined effect of the compressive influence of the tip and electric bias.
- Inventors:
-
- Knoxville, TN
- Oak Ridge, TN
- Raleigh, NC
- Malden, MA
- Arlington, MA
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 919404
- Patent Number(s):
- 7292768
- Application Number:
- 11/409,740
- Assignee:
- UT-Battelle, LLC (Oak Ridge, TN)
- Patent Classifications (CPCs):
-
G - PHYSICS G11 - INFORMATION STORAGE G11B - INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- DOE Contract Number:
- AC05-00OR22725
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Kalinin, Sergei V, Baddorf, Arthur P, Lee, Ho Nyung, Shin, Junsoo, Gruverman, Alexei L, Karapetian, Edgar, and Kachanov, Mark. Ultrahigh density ferroelectric storage and lithography by high order ferroic switching. United States: N. p., 2007.
Web.
Kalinin, Sergei V, Baddorf, Arthur P, Lee, Ho Nyung, Shin, Junsoo, Gruverman, Alexei L, Karapetian, Edgar, & Kachanov, Mark. Ultrahigh density ferroelectric storage and lithography by high order ferroic switching. United States.
Kalinin, Sergei V, Baddorf, Arthur P, Lee, Ho Nyung, Shin, Junsoo, Gruverman, Alexei L, Karapetian, Edgar, and Kachanov, Mark. Tue .
"Ultrahigh density ferroelectric storage and lithography by high order ferroic switching". United States. https://www.osti.gov/servlets/purl/919404.
@article{osti_919404,
title = {Ultrahigh density ferroelectric storage and lithography by high order ferroic switching},
author = {Kalinin, Sergei V and Baddorf, Arthur P and Lee, Ho Nyung and Shin, Junsoo and Gruverman, Alexei L and Karapetian, Edgar and Kachanov, Mark},
abstractNote = {A method for switching the direction of polarization in a relatively small domain in a thin-film ferroelectric material whose direction of polarization is oriented normal to the surface of the material involves a step of moving an electrically-chargeable tip into contact with the surface of the ferroelectric material so that the direction of polarization in a region adjacent the tip becomes oriented in a preselected direction relative to the surface of the ferroelectric material. The tip is then pressed against the surface of the ferroelectric material so that the direction of polarization of the ferroelectric material within the area of the ferroelectric material in contact with the tip is reversed under the combined effect of the compressive influence of the tip and electric bias.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 06 00:00:00 EST 2007},
month = {Tue Nov 06 00:00:00 EST 2007}
}
Works referenced in this record:
Size Effects on Polarization in Epitaxial Ferroelectric Films and the Concept of Ferroelectric Tunnel Junctions Including First Results
journal, January 2001
- Kohlstedt, H.; Pertsev, N. A.; Waser, R.
- MRS Proceedings, Vol. 688
Polarization reversal anti-parallel to the applied electric field observed using a scanning nonlinear dielectric microscopy
journal, January 2004
- Morita, Takeshi; Cho, Yasuo
- Applied Physics Letters, Vol. 84, Issue 2