Title: Method for fabricating hafnia films

Abstract

The present invention comprises a method for fabricating hafnia film comprising the steps of providing a substrate having a surface that allows formation of a self-assembled monolayer thereon via covalent bonding; providing an aqueous solution that provides homogeneous hafnium ionic complexes and hafnium nanoclusters wherein the aqueous solution is capable of undergoing homogeneous precipitation under controlled conditions for a desired period of time at a controlled temperature and controlled solution acidity for desired nanocluster nucleation and growth kinetics, desired nanocluster size, desired growth rate of film thickness and desired film surface characteristics. The method further comprising forming the self-assembled monolayer on the surface of the substrate wherein the self-assembled monolayer comprises a plurality of hydrocarbon chains cross-linked together along the surface of the substrate, the hydrocarbon chains being uniformly spaced from one another and wherein each of the hydrocarbon chains having a functional anchoring group at a first end of the chain covalently bonded with the surface of the substrate and each of the hydrocarbon chains having a functional terminating group projected away from the surface wherein the functional terminating group provides a bonding site for the hafnium film to grow; and exposing the substrate to the aqueous solution formore » a desired period of time at a controlled temperature wherein the hafnium ionic complexes and the hafnium nanoclusters are deposited on the bonding site of the functional terminating group thereby forming the hafnia film wherein the hafnium bonded to the hydrocarbons and to one another provide a uniform ordered arrangement defined by the uniform arrangement of the hydrocarbons. « less

Inventors:

Hu, Michael Z ^[1]

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1. Knoxville, TN

Issue Date:

Tue Aug 21 00:00:00 EDT 2007

Research Org.:

Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

913434

Patent Number(s):

7258745

Application Number:

10/913,896

Assignee:

UT-Battelle, LLC (Oak Ridge, TN)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B05 - SPRAYING OR ATOMISING IN GENERAL B05D - PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

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B - PERFORMING OPERATIONS B05 - SPRAYING OR ATOMISING IN GENERAL B05D - PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL

B05D1/185 - {applying monomolecular layers

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
B82Y40/00 - Manufacture or treatment of nanostructures

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C23C18/00 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02181 - {the material containing hafnium, e.g. HfO2}
H01L21/02282 - {liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating}
H01L21/31645 - {Deposition of Hafnium oxides, e.g. HfO2}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S977/707 - having different types of nanoscale structures or devices on a common substrate
Y10S977/712 - formed from plural layers of nanosized material, e.g. stacked structures
Y10S977/715 - On an organic substrate
Y10S977/721 - On a silicon substrate

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DOE Contract Number:  

AC05-00OR22725

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE