Efg Crystal Growth Apparatus And Method
Abstract
An improved mechanical arrangement controls the introduction of silicon particles into an EFG (Edge-defined Film-fed Growth) crucible/die unit for melt replenishment during a crystal growth run. A feeder unit injects silicon particles upwardly through a center hub of the crucible/die unit and the mechanical arrangement intercepts the injected particles and directs them so that they drop into the melt in a selected region of the crucible and at velocity which reduces splashing, whereby to reduce the likelihood of interruption of the growth process due to formation of a solid mass of silicon on the center hub and adjoining components. The invention also comprises use of a Faraday ring to alter the ratio of the electrical currents flowing through primary and secondary induction heating coils that heat the crucible die unit and the mechanical arrangement.
- Inventors:
-
- Concord, MA
- Nashua, NH
- Issue Date:
- OSTI Identifier:
- 880419
- Patent Number(s):
- 6562132
- Application Number:
- 10/826073
- Assignee:
- ASE Americas, Inc. (Billerica, MA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- DOE Contract Number:
- ZAX-8-17647-10
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Mackintosh, Brian H, and Ouellette, Marc. Efg Crystal Growth Apparatus And Method. United States: N. p., 2003.
Web.
Mackintosh, Brian H, & Ouellette, Marc. Efg Crystal Growth Apparatus And Method. United States.
Mackintosh, Brian H, and Ouellette, Marc. Tue .
"Efg Crystal Growth Apparatus And Method". United States. https://www.osti.gov/servlets/purl/880419.
@article{osti_880419,
title = {Efg Crystal Growth Apparatus And Method},
author = {Mackintosh, Brian H and Ouellette, Marc},
abstractNote = {An improved mechanical arrangement controls the introduction of silicon particles into an EFG (Edge-defined Film-fed Growth) crucible/die unit for melt replenishment during a crystal growth run. A feeder unit injects silicon particles upwardly through a center hub of the crucible/die unit and the mechanical arrangement intercepts the injected particles and directs them so that they drop into the melt in a selected region of the crucible and at velocity which reduces splashing, whereby to reduce the likelihood of interruption of the growth process due to formation of a solid mass of silicon on the center hub and adjoining components. The invention also comprises use of a Faraday ring to alter the ratio of the electrical currents flowing through primary and secondary induction heating coils that heat the crucible die unit and the mechanical arrangement.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue May 13 00:00:00 EDT 2003},
month = {Tue May 13 00:00:00 EDT 2003}
}