Process Of Bonding Copper And Tungsten

Slattery, Kevin T; Driemeyer, Daniel E; Davis, John W

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Title: Process Of Bonding Copper And Tungsten

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Abstract

Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by sintering a stack of individual copper and tungsten powder blend layers having progressively higher copper content/tungsten content, by volume, ratio values in successive powder blend layers in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.

Inventors:

Slattery, Kevin T ^[1]; Driemeyer, Daniel E ^[2]; Davis, John W ^[3]

St. Charles, MO
Manchester, MO
Ballwin, MO

Issue Date:: Tue Jul 18 00:00:00 EDT 2000

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

OSTI Identifier:: 879448

Patent Number(s):: 6089444

Application Number:: 08/921581

Assignee:: McDonnell Douglas Corporation (St. Louis, MO)

Patent Classifications (CPCs):: B - PERFORMING OPERATIONS B22 - CASTING B22F - WORKING METALLIC POWDER

B - PERFORMING OPERATIONS B23 - MACHINE TOOLS B23K - SOLDERING OR UNSOLDERING

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B - PERFORMING OPERATIONS B22 - CASTING B22F - WORKING METALLIC POWDER
B22F2207/01 - Composition gradients
B22F2998/00 - Supplementary information concerning processes or compositions relating to powder metallurgy
B22F7/04 - with one or more layers not made from powder, e.g. made from solid metal
B22F7/064 - {using an intermediate powder layer}

B - PERFORMING OPERATIONS B23 - MACHINE TOOLS B23K - SOLDERING OR UNSOLDERING
B23K35/005 - {at least one of the workpieces being of a refractory metal}
B23K35/007 - {at least one of the workpieces being of copper or another noble metal}

B - PERFORMING OPERATIONS B32 - LAYERED PRODUCTS B32B - LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
B32B15/01 - all layers being exclusively metallic {

C - CHEMISTRY C22 - METALLURGY C22C - ALLOYS
C22C27/04 - Alloys based on tungsten or molybdenum
C22C9/04 - with zinc as the next major constituent

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T428/12021 - having composition or density gradient or differential porosity
Y10T428/12042 - Porous component
Y10T428/12458 - having composition, density, or hardness gradient

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DOE Contract Number:: AC-3013

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Citation Formats


                    Slattery, Kevin T, Driemeyer, Daniel E, and Davis, John W. Process Of Bonding Copper And Tungsten.  United States: N. p., 2000. 
        Web.

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                    Slattery, Kevin T, Driemeyer, Daniel E, & Davis, John W. Process Of Bonding Copper And Tungsten.  United States.

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                    Slattery, Kevin T, Driemeyer, Daniel E, and Davis, John W. Tue .  
        "Process Of Bonding Copper And Tungsten".  United States.  https://www.osti.gov/servlets/purl/879448.

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@article{osti_879448,

  title        = {Process Of Bonding Copper And Tungsten},

  author       = {Slattery, Kevin T and Driemeyer, Daniel E and Davis, John W},

  abstractNote = {Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by sintering a stack of individual copper and tungsten powder blend layers having progressively higher copper content/tungsten content, by volume, ratio values in successive powder blend layers in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Jul 18 00:00:00 EDT 2000},

  month        = {Tue Jul 18 00:00:00 EDT 2000}

}

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