Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication
Abstract
Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).
- Inventors:
-
- Baltimore, MD
- (Palto Alto, CA)
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- OSTI Identifier:
- 874390
- Patent Number(s):
- 6380627
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- resistance; barrier; layer; isolating; adhering; passivating; copper; metal; semiconductor; fabrication; cubic; metastable; refractory; carbides; layers; isolate; adhere; passivate; carbide; deposited; conjunction; metallizations; form; multilayer; characterized; crystal; structure; strong; 100; texture; materials; transition; vanadium; vc; niobium; nbc; tantalum; tac; chromium; crsub3; csub2; tungsten; wc; molybdenum; moc; transition metal; semiconductor fabrication; metal carbide; /257/
Citation Formats
Weihs, Timothy P, and Barbee, Jr., Troy W. Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication. United States: N. p., 2002.
Web.
Weihs, Timothy P, & Barbee, Jr., Troy W. Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication. United States.
Weihs, Timothy P, and Barbee, Jr., Troy W. Tue .
"Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication". United States. https://www.osti.gov/servlets/purl/874390.
@article{osti_874390,
title = {Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication},
author = {Weihs, Timothy P and Barbee, Jr., Troy W.},
abstractNote = {Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 2002},
month = {Tue Jan 01 00:00:00 EST 2002}
}
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Works referenced in this record:
Diffusion barrier properties of TaC between Si and Cu
journal, June 1997
- Imahori, Junji; Oku, Takeo; Murakami, Masanori
- Thin Solid Films, Vol. 301, Issue 1-2