All-vapor processing of p-type tellurium-containing II-VI semiconductor and ohmic contacts thereof
Abstract
An all dry method for producing solar cells is provided comprising first heat-annealing a II-VI semiconductor; enhancing the conductivity and grain size of the annealed layer; modifying the surface and depositing a tellurium layer onto the enhanced layer; and then depositing copper onto the tellurium layer so as to produce a copper tellurium compound on the layer.
- Inventors:
-
- Elkton, MD
- Issue Date:
- Research Org.:
- Univ. of Delaware, Newark, DE (United States)
- OSTI Identifier:
- 873809
- Patent Number(s):
- 6251701
- Application Number:
- 09/516,686
- Assignee:
- United States of America as represented by United States Department (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- XAK71760901
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- all-vapor; processing; p-type; tellurium-containing; ii-vi; semiconductor; ohmic; contacts; dry; method; producing; solar; cells; provided; comprising; heat-annealing; enhancing; conductivity; grain; size; annealed; layer; modifying; surface; depositing; tellurium; enhanced; copper; produce; compound; solar cell; solar cells; provided comprising; grain size; ohmic contact; ii-vi semiconductor; ohmic contacts; p-type tellurium-containing; tellurium-containing ii-vi; tellurium compound; p-type tellurium; dry method; /438/136/
Citation Formats
McCandless, Brian E. All-vapor processing of p-type tellurium-containing II-VI semiconductor and ohmic contacts thereof. United States: N. p., 2001.
Web.
McCandless, Brian E. All-vapor processing of p-type tellurium-containing II-VI semiconductor and ohmic contacts thereof. United States.
McCandless, Brian E. Mon .
"All-vapor processing of p-type tellurium-containing II-VI semiconductor and ohmic contacts thereof". United States. https://www.osti.gov/servlets/purl/873809.
@article{osti_873809,
title = {All-vapor processing of p-type tellurium-containing II-VI semiconductor and ohmic contacts thereof},
author = {McCandless, Brian E},
abstractNote = {An all dry method for producing solar cells is provided comprising first heat-annealing a II-VI semiconductor; enhancing the conductivity and grain size of the annealed layer; modifying the surface and depositing a tellurium layer onto the enhanced layer; and then depositing copper onto the tellurium layer so as to produce a copper tellurium compound on the layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2001},
month = {Mon Jan 01 00:00:00 EST 2001}
}
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Works referenced in this record:
A treatment to allow contacting CdTe with different conductors [solar cells]
conference, January 1994
- McCandless, B. E.; Qu, Y.; Birkmire, R. W.
- Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)