Electrical isolation of component cells in monolithically interconnected modules
Abstract
A monolithically interconnected photovoltaic module having cells which are electrically connected which comprises a substrate, a plurality of cells formed over the substrate, each cell including a primary absorber layer having a light receiving surface and a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, and a cell isolation diode layer having a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, the diode layer intervening the substrate and the absorber layer wherein the absorber and diode interfacial regions of a same conductivity type orientation, the diode layer having a reverse-breakdown voltage sufficient to prevent inter-cell shunting, and each cell electrically isolated from adjacent cells with a vertical trench trough the pn-junction of the diode layer, interconnects disposed in the trenches contacting the absorber regions of adjacent cells which are doped an opposite conductivity type, and electrical contacts.
- Inventors:
-
- Golden, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 873764
- Patent Number(s):
- 6239354
- Assignee:
- Midwest Research Institute (Kansas City, MI)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-99GO10337
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- electrical; isolation; component; cells; monolithically; interconnected; modules; photovoltaic; module; electrically; connected; comprises; substrate; plurality; formed; cell; including; primary; absorber; layer; light; receiving; surface; p-region; p-type; dopant; n-region; n-type; adjacent; form; single; pn-junction; diode; intervening; interfacial; regions; conductivity; type; orientation; reverse-breakdown; voltage; sufficient; prevent; inter-cell; shunting; isolated; vertical; trench; trough; interconnects; disposed; trenches; contacting; doped; opposite; contacts; receiving surface; n-type dopant; adjacent cells; electrically isolated; electrical contacts; cell including; photovoltaic module; breakdown voltage; electrical contact; electrically connected; p-type dopant; adjacent cell; conductivity type; electrical isolation; absorber layer; region formed; type dopant; interconnected photovoltaic; electrically isolate; monolithically interconnected; cell electric; interconnected modules; /136/257/438/
Citation Formats
Wanlass, Mark W. Electrical isolation of component cells in monolithically interconnected modules. United States: N. p., 2001.
Web.
Wanlass, Mark W. Electrical isolation of component cells in monolithically interconnected modules. United States.
Wanlass, Mark W. Mon .
"Electrical isolation of component cells in monolithically interconnected modules". United States. https://www.osti.gov/servlets/purl/873764.
@article{osti_873764,
title = {Electrical isolation of component cells in monolithically interconnected modules},
author = {Wanlass, Mark W},
abstractNote = {A monolithically interconnected photovoltaic module having cells which are electrically connected which comprises a substrate, a plurality of cells formed over the substrate, each cell including a primary absorber layer having a light receiving surface and a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, and a cell isolation diode layer having a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, the diode layer intervening the substrate and the absorber layer wherein the absorber and diode interfacial regions of a same conductivity type orientation, the diode layer having a reverse-breakdown voltage sufficient to prevent inter-cell shunting, and each cell electrically isolated from adjacent cells with a vertical trench trough the pn-junction of the diode layer, interconnects disposed in the trenches contacting the absorber regions of adjacent cells which are doped an opposite conductivity type, and electrical contacts.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2001},
month = {Mon Jan 01 00:00:00 EST 2001}
}
Works referenced in this record:
Monolithically interconnected InGaAs TPV module development
conference, January 1996
- Wilt, D. M.; Fatemi, N. S.; Jenkins, P. P.
- Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996