Process for forming epitaxial perovskite thin film layers using halide precursors

Clem, Paul G; Rodriguez, Mark A; Voigt, James A; Ashley, Carol S

Advanced Search OptionsAdvanced Search queries use a traditional Term Search. For more info, see our FAQ.

All Fields:

Patent Title:

Abstract:

Assignee:

Inventor(s):

Patent Number:

Patent Classification (CPC):

All Classifications
A - human necessities
A01 - agriculture
A21 - baking
A22 - butchering
A23 - foods or foodstuffs
A24 - tobacco
A41 - wearing apparel
A42 - headwear
A43 - footwear
A44 - haberdashery
A45 - hand or travelling articles
A46 - brushware
A47 - furniture
A61 - medical or veterinary science
A62 - life-saving
A63 - sports
A99 - subject matter not otherwise provided for in this section
B - performing operations
B01 - physical or chemical processes or apparatus in general
B02 - crushing, pulverising, or disintegrating
B03 - separation of solid materials using liquids or using pneumatic tables or jigs
B04 - centrifugal apparatus or machines for carrying-out physical or chemical processes
B05 - spraying or atomising in general
B06 - generating or transmitting mechanical vibrations in general
B07 - separating solids from solids
B08 - cleaning
B09 - disposal of solid waste
B21 - mechanical metal-working without essentially removing material
B22 - casting
B23 - machine tools
B24 - grinding
B25 - hand tools
B26 - hand cutting tools
B27 - working or preserving wood or similar material
B28 - working cement, clay, or stone
B29 - working of plastics
B30 - presses
B31 - making articles of paper, cardboard or material worked in a manner analogous to paper
B32 - layered products
B33 - additive manufacturing technology
B41 - printing
B42 - bookbinding
B43 - writing or drawing implements
B44 - decorative arts
B60 - vehicles in general
B61 - railways
B62 - land vehicles for travelling otherwise than on rails
B63 - ships or other waterborne vessels
B64 - aircraft
B65 - conveying
B66 - hoisting
B67 - opening, closing {or cleaning} bottles, jars or similar containers
B68 - saddlery
B81 - microstructural technology
B82 - nanotechnology
B99 - subject matter not otherwise provided for in this section
C - chemistry
C01 - inorganic chemistry
C02 - treatment of water, waste water, sewage, or sludge
C03 - glass
C04 - cements
C05 - fertilisers
C06 - explosives
C07 - organic chemistry
C08 - organic macromolecular compounds
C09 - dyes
C10 - petroleum, gas or coke industries
C11 - animal or vegetable oils, fats, fatty substances or waxes
C12 - biochemistry
C13 - sugar industry
C14 - skins
C21 - metallurgy of iron
C22 - metallurgy
C23 - coating metallic material
C25 - electrolytic or electrophoretic processes
C30 - crystal growth
C40 - combinatorial technology
C99 - subject matter not otherwise provided for in this section
D - textiles
D01 - natural or man-made threads or fibres
D02 - yarns
D03 - weaving
D04 - braiding
D05 - sewing
D06 - treatment of textiles or the like
D07 - ropes
D10 - indexing scheme associated with sublasses of section d, relating to textiles
D21 - paper-making
D99 - subject matter not otherwise provided for in this section
E - fixed constructions
E01 - construction of roads, railways, or bridges
E02 - hydraulic engineering
E03 - water supply
E04 - building
E05 - locks
E06 - doors, windows, shutters, or roller blinds in general
E21 - earth drilling
E99 - subject matter not otherwise provided for in this section
F - mechanical engineering
F01 - machines or engines in general
F02 - combustion engines
F03 - machines or engines for liquids
F04 - positive - displacement machines for liquids
F05 - indexing schemes relating to engines or pumps in various subclasses of classes f01-f04
F15 - fluid-pressure actuators
F16 - engineering elements and units
F17 - storing or distributing gases or liquids
F21 - lighting
F22 - steam generation
F23 - combustion apparatus
F24 - heating
F25 - refrigeration or cooling
F26 - drying
F27 - furnaces
F28 - heat exchange in general
F41 - weapons
F42 - ammunition
F99 - subject matter not otherwise provided for in this section
G - physics
G01 - measuring
G02 - optics
G03 - photography
G04 - horology
G05 - controlling
G06 - computing
G07 - checking-devices
G08 - signalling
G09 - education
G10 - musical instruments
G11 - information storage
G12 - instrument details
G16 - information and communication technology [ict] specially adapted for specific application fields
G21 - nuclear physics
G99 - subject matter not otherwise provided for in this section
H - electricity
H01 - basic electric elements
H02 - generation
H03 - basic electronic circuitry
H04 - electric communication technique
H05 - electric techniques not otherwise provided for
H99 - subject matter not otherwise provided for in this section
Y - new / cross sectional technologies
Y02 - technologies or applications for mitigation or adaptation against climate change
Y04 - information or communication technologies having an impact on other technology areas
Y10 - technical subjects covered by former uspc

More Options ...

Title: Process for forming epitaxial perovskite thin film layers using halide precursors

Abstract

A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

Inventors:

Clem, Paul G ^[1]; Rodriguez, Mark A ^[1]; Voigt, James A ^[2]; Ashley, Carol S ^[1]

Albuquerque, NM
Corrales, NM

Issue Date:: Mon Jan 01 00:00:00 EST 2001

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

OSTI Identifier:: 873727

Patent Number(s):: 6231666

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Classifications (CPCs):: C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

Show more

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B29/225 - {based on rare earth copper oxides, e.g. high T-superconductors}
C30B7/005 - {Epitaxial layer growth}

Show less

DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: process; forming; epitaxial; perovskite; film; layers; halide; precursors; perovskite-phase; substrate; buffer; layer; yba; cu; 7-x; superconductor; utilizes; alkali; alkaline; metal; acetates; dissolved; halogenated; organic; acid; titanium; isopropoxide; dip; spin-coat; heated; 700; degree; inert; gas; atmosphere; form; ybco; deposited; formed; film layers; layer formed; process utilizes; buffer layer; inert gas; gas atmosphere; film layer; organic acid; halogenated organic; epitaxial film; utilizes alkali; ybco superconductor; forming epitaxial; metal acetate; superconductor layer; /117/

Citation Formats


                    Clem, Paul G, Rodriguez, Mark A, Voigt, James A, and Ashley, Carol S. Process for forming epitaxial perovskite thin film layers using halide precursors.  United States: N. p., 2001. 
        Web.

Copy to clipboard


                    Clem, Paul G, Rodriguez, Mark A, Voigt, James A, & Ashley, Carol S. Process for forming epitaxial perovskite thin film layers using halide precursors.  United States.

Copy to clipboard


                    Clem, Paul G, Rodriguez, Mark A, Voigt, James A, and Ashley, Carol S. Mon .  
        "Process for forming epitaxial perovskite thin film layers using halide precursors".  United States.  https://www.osti.gov/servlets/purl/873727.

Copy to clipboard


                    
@article{osti_873727,

  title        = {Process for forming epitaxial perovskite thin film layers using halide precursors},

  author       = {Clem, Paul G and Rodriguez, Mark A and Voigt, James A and Ashley, Carol S},

  abstractNote = {A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Mon Jan 01 00:00:00 EST 2001},

  month        = {Mon Jan 01 00:00:00 EST 2001}

}

Copy to clipboard

Patent:

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Metalorganic deposition of high‐ J _c Ba ₂ YCu ₃ O _{7− x} thin films from trifluoroacetate precursors onto (100) SrTiO ₃
journal, October 1990

McIntyre, Paul C.; Cima, Michael J.; Ng, Man Fai
Journal of Applied Physics, Vol. 68, Issue 8
https://doi.org/10.1063/1.346233

Heteroepitaxial growth of chemically derived ex situ Ba ₂ YCu ₃ O _{7− x} thin films
journal, September 1994

McIntyre, Paul C.; Cima, Michael J.
Journal of Materials Research, Vol. 9, Issue 9
https://doi.org/10.1557/JMR.1994.2219

Epitaxial nucleation and growth of chemically derived Ba ₂ YCu ₃ O _{7− x} thin films on (001) SrTiO ₃
journal, May 1995

McIntyre, P. C.; Cima, M. J.; Roshko, A.
Journal of Applied Physics, Vol. 77, Issue 10
https://doi.org/10.1063/1.359278

Effect of growth conditions on the properties and morphology of chemically derived epitaxial thin films of Ba ₂ YCu ₃ O ₇₋ _x on (001) LaAlO ₃
journal, February 1992

McIntyre, Paul C.; Cima, Michael J.; Smith, John A.
Journal of Applied Physics, Vol. 71, Issue 4
https://doi.org/10.1063/1.351172

Similar Records in DOE Patents and OSTI.GOV collections:

Atomic layer deposition of metal sulfide thin films using non-halogenated precursors

Patent Martinson, Alex B. F.; Elam, Jeffrey W.; Pellin, Michael J.

A method for preparing a metal sulfide thin film using ALD and structures incorporating the metal sulfide thin film. The method includes providing an ALD reactor, a substrate, a first precursor comprising a metal and a second precursor comprising a sulfur compound. The first and the second precursors are reacted in the ALD precursor to form a metal sulfide thin film on the substrate. In a particular embodiment, the metal compound comprises Bis(N,N'-di-sec-butylacetamidinato)dicopper(I) and the sulfur compound comprises hydrogen sulfide (H.sub.2S) to prepare a Cu.sub.2S film. The resulting metal sulfide thin film may be used in among other devices, photovoltaicmore » « less
Full Text Available
Sensitive and robust thin film X-ray detector using 2D layered perovskite diodes

Patent Tsai, Hsinhan; Nie, Wanyi

A radiation detector includes a p-i-n architecture including a p-type contact layer, an n-type contact layer, and an intrinsic layer between the p-type contact layer and the n-type contact layer. The intrinsic layer includes a thin film comprising a highly crystalline 2D layered perovskite material. The radiation detectors according to embodiments of the present disclosure generate high open circuit voltages, have good detecting photon density limits and high sensitivities, and can be self-powered.
Full Text Available
Process for depositing thin film layers onto surfaces modified with organic functional groups and products formed thereby

Patent Tarasevich, Barbara J [Richland, WA]; Rieke, Peter C [Pasco, WA]

A method is provided for producing a thin film product, comprising a first step in which an underlying substrate of a first material is provided. The underlying substrate includes a plurality of unmodified sites. The underlying substrate is then chemically modified wherein a plurality of organic functional groups are attached to a plurality of the unmodified sites. The arrangement and type of the functional group used can be selected for the purpose of controlling particular properties of the second material deposited. A thin film layer of at least one second material is then deposited onto the chemically modified underlying substrate.more » « less
Full Text Available
Low temperature thin films formed from nanocrystal precursors

Patent Alivisatos, A Paul [Berkeley, CA]; Goldstein, Avery N [Oakland, CA]

Nanocrystals of semiconductor compounds are produced. When they are applied as a contiguous layer onto a substrate and heated they fuse into a continuous layer at temperatures as much as 250, 500, 750 or even 1000.degree. K below their bulk melting point. This allows continuous semiconductor films in the 0.25 to 25 nm thickness range to be formed with minimal thermal exposure.
Full Text Available
Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor

Patent Dhere, Neelkanth G.; Kadam, Ankur A.

A method of forming a CIGSS absorber layer includes the steps of providing a metal precursor, and selenizing the metal precursor using diethyl selenium to form a selenized metal precursor layer (CIGSS absorber layer). A high efficiency solar cell includes a CIGSS absorber layer formed by a process including selenizing a metal precursor using diethyl selenium to form the CIGSS absorber layer.
Full Text Available

Similar Records

Title: Process for forming epitaxial perovskite thin film layers using halide precursors

Abstract

Citation Formats

Metalorganic deposition of high‐ J c Ba 2 YCu 3 O 7− x thin films from trifluoroacetate precursors onto (100) SrTiO 3 journal, October 1990

Heteroepitaxial growth of chemically derived ex situ Ba 2 YCu 3 O 7− x thin films journal, September 1994

Epitaxial nucleation and growth of chemically derived Ba 2 YCu 3 O 7− x thin films on (001) SrTiO 3 journal, May 1995

Effect of growth conditions on the properties and morphology of chemically derived epitaxial thin films of Ba 2 YCu 3 O 7− x on (001) LaAlO 3 journal, February 1992

Metalorganic deposition of high‐ J _c Ba ₂ YCu ₃ O _{7− x} thin films from trifluoroacetate precursors onto (100) SrTiO ₃
journal, October 1990

Heteroepitaxial growth of chemically derived ex situ Ba ₂ YCu ₃ O _{7− x} thin films
journal, September 1994

Epitaxial nucleation and growth of chemically derived Ba ₂ YCu ₃ O _{7− x} thin films on (001) SrTiO ₃
journal, May 1995

Effect of growth conditions on the properties and morphology of chemically derived epitaxial thin films of Ba ₂ YCu ₃ O ₇₋ _x on (001) LaAlO ₃
journal, February 1992