Process for producing Ti-Cr-Al-O thin film resistors
Abstract
Thin films of Ti-Cr-Al-O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti-Cr-Al-O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti-Cr-Al-O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti-Cr-Al-O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.
- Inventors:
-
- Livermore, CA
- Solana Beach, CA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- OSTI Identifier:
- 873668
- Patent Number(s):
- 6217722
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01C - RESISTORS
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- process; producing; ti-cr-al-o; film; resistors; films; resistor; material; rf; sputter; deposited; ceramic; targets; reactive; gas; mixture; resistivity; values; 10; ohm-cm; measured; thick; discretely; selected; control; target; composition; deposition; parameters; application; found; thermodynamically; stable; unlike; metal-oxide; vertical; lateral; example; layer; beneath; field; emission; cathode; flat; panel; display; surface; emissivity; coating; insulating; wall; supports; displays; thermodynamically stable; deposition parameters; resistivity values; rf sputter; control surface; surface emissivity; oxide films; insulating material; field emission; gas mixture; oxide film; flat panel; panel displays; panel display; wall supports; resistor material; emission cathode; vertical wall; film resistor; layer beneath; ceramic targets; sputter deposited; sputter deposit; film resistors; dynamically stable; /204/
Citation Formats
Jankowski, Alan F, and Schmid, Anthony P. Process for producing Ti-Cr-Al-O thin film resistors. United States: N. p., 2001.
Web.
Jankowski, Alan F, & Schmid, Anthony P. Process for producing Ti-Cr-Al-O thin film resistors. United States.
Jankowski, Alan F, and Schmid, Anthony P. Mon .
"Process for producing Ti-Cr-Al-O thin film resistors". United States. https://www.osti.gov/servlets/purl/873668.
@article{osti_873668,
title = {Process for producing Ti-Cr-Al-O thin film resistors},
author = {Jankowski, Alan F and Schmid, Anthony P},
abstractNote = {Thin films of Ti-Cr-Al-O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti-Cr-Al-O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti-Cr-Al-O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti-Cr-Al-O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2001},
month = {Mon Jan 01 00:00:00 EST 2001}
}