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Title: High numerical aperture ring field projection system for extreme ultraviolet lithography

Abstract

An all-reflective optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first concave mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receives a chief ray at an incidence angle of less than substantially 12.degree., and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 15.degree.. Four of the six reflecting surfaces have an aspheric departure of less than substantially 7 .mu.m. Five of the six reflecting surfaces have an aspheric departure of less than substantially 14 .mu.m. Each of the six reflecting surfaces has an aspheric departure of less than 16.0 .mu.m.

Inventors:
 [1]
  1. 315 Eastridge Dr., San Ramon, CA 94583-4905
Issue Date:
Research Org.:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
OSTI Identifier:
873532
Patent Number(s):
6183095
Assignee:
Hudyma, Russell (315 Eastridge Dr., San Ramon, CA 94583-4905)
Patent Classifications (CPCs):
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
numerical; aperture; field; projection; extreme; ultraviolet; lithography; all-reflective; optical; photolithography; camera; source; euv; radiation; wafer; mask; imaged; concave; mirror; third; convex; fourth; fifth; sixth; configured; five; six; mirrors; receives; chief; ray; incidence; angle; substantially; 12; degree; 15; reflecting; surfaces; aspheric; departure; 14; 16; mirrors receives; all-reflective optical; reflective optical; numerical aperture; reflecting surfaces; aspheric departure; ultraviolet lithography; extreme ultraviolet; reflecting surface; concave mirror; six mirrors; chief ray; convex mirror; euv radiation; six reflecting; incidence angle; sixth concave; third convex; fifth convex; field projection; fourth concave; projection photolithography; photolithography camera; mirrors receive; lithography camera; /359/

Citation Formats

Hudyma, Russell. High numerical aperture ring field projection system for extreme ultraviolet lithography. United States: N. p., 2001. Web.
Hudyma, Russell. High numerical aperture ring field projection system for extreme ultraviolet lithography. United States.
Hudyma, Russell. Mon . "High numerical aperture ring field projection system for extreme ultraviolet lithography". United States. https://www.osti.gov/servlets/purl/873532.
@article{osti_873532,
title = {High numerical aperture ring field projection system for extreme ultraviolet lithography},
author = {Hudyma, Russell},
abstractNote = {An all-reflective optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first concave mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receives a chief ray at an incidence angle of less than substantially 12.degree., and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 15.degree.. Four of the six reflecting surfaces have an aspheric departure of less than substantially 7 .mu.m. Five of the six reflecting surfaces have an aspheric departure of less than substantially 14 .mu.m. Each of the six reflecting surfaces has an aspheric departure of less than 16.0 .mu.m.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2001},
month = {Mon Jan 01 00:00:00 EST 2001}
}

Works referenced in this record:

Design of reflective relay for soft x-ray lithography
conference, January 1991


Reflective systems design study for soft x-ray projection lithography
journal, November 1990


EUV optical design for a 100-nm CD imaging system
conference, June 1998

  • Sweeney, Donald W.; Hudyma, Russell M.; Chapman, Henry N.
  • 23rd Annual International Symposium on Microlithography, SPIE Proceedings
  • https://doi.org/10.1117/12.309559

Optical system design issues in development of projection camera for EUV lithography
conference, May 1995