Formation of microchannels from low-temperature plasma-deposited silicon oxynitride
Abstract
A process for forming one or more fluid microchannels on a substrate is disclosed that is compatible with the formation of integrated circuitry on the substrate. The microchannels can be formed below an upper surface of the substrate, above the upper surface, or both. The microchannels are formed by depositing a covering layer of silicon oxynitride over a mold formed of a sacrificial material such as photoresist which can later be removed. The silicon oxynitride is deposited at a low temperature (.ltoreq.100.degree. C.) and preferably near room temperature using a high-density plasma (e.g. an electron-cyclotron resonance plasma or an inductively-coupled plasma). In some embodiments of the present invention, the microchannels can be completely lined with silicon oxynitride to present a uniform material composition to a fluid therein. The present invention has applications for forming microchannels for use in chromatography and electrophoresis. Additionally, the microchannels can be used for electrokinetic pumping, or for localized or global substrate cooling.
- Inventors:
-
- Los Lunas, NM
- Edgewood, NM
- Albuquerque, NM
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 873127
- Patent Number(s):
- 6096656
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81B - MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
B - PERFORMING OPERATIONS B81 - MICROSTRUCTURAL TECHNOLOGY B81C - PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- formation; microchannels; low-temperature; plasma-deposited; silicon; oxynitride; process; forming; fluid; substrate; disclosed; compatible; integrated; circuitry; formed; below; upper; surface; depositing; covering; layer; mold; sacrificial; material; photoresist; removed; deposited; temperature; ltoreq; 100; degree; preferably; near; high-density; plasma; electron-cyclotron; resonance; inductively-coupled; embodiments; completely; lined; uniform; composition; therein; applications; chromatography; electrophoresis; additionally; electrokinetic; pumping; localized; global; cooling; sacrificial material; high-density plasma; electrokinetic pump; material composition; density plasma; upper surface; integrated circuit; cyclotron resonance; coupled plasma; silicon oxynitride; electrokinetic pumping; temperature plasma; formed below; integrated circuitry; /438/205/216/
Citation Formats
Matzke, Carolyn M, Ashby, Carol I. H., Bridges, Monica M, and Manginell, Ronald P. Formation of microchannels from low-temperature plasma-deposited silicon oxynitride. United States: N. p., 2000.
Web.
Matzke, Carolyn M, Ashby, Carol I. H., Bridges, Monica M, & Manginell, Ronald P. Formation of microchannels from low-temperature plasma-deposited silicon oxynitride. United States.
Matzke, Carolyn M, Ashby, Carol I. H., Bridges, Monica M, and Manginell, Ronald P. Sat .
"Formation of microchannels from low-temperature plasma-deposited silicon oxynitride". United States. https://www.osti.gov/servlets/purl/873127.
@article{osti_873127,
title = {Formation of microchannels from low-temperature plasma-deposited silicon oxynitride},
author = {Matzke, Carolyn M and Ashby, Carol I. H. and Bridges, Monica M and Manginell, Ronald P},
abstractNote = {A process for forming one or more fluid microchannels on a substrate is disclosed that is compatible with the formation of integrated circuitry on the substrate. The microchannels can be formed below an upper surface of the substrate, above the upper surface, or both. The microchannels are formed by depositing a covering layer of silicon oxynitride over a mold formed of a sacrificial material such as photoresist which can later be removed. The silicon oxynitride is deposited at a low temperature (.ltoreq.100.degree. C.) and preferably near room temperature using a high-density plasma (e.g. an electron-cyclotron resonance plasma or an inductively-coupled plasma). In some embodiments of the present invention, the microchannels can be completely lined with silicon oxynitride to present a uniform material composition to a fluid therein. The present invention has applications for forming microchannels for use in chromatography and electrophoresis. Additionally, the microchannels can be used for electrokinetic pumping, or for localized or global substrate cooling.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 2000},
month = {Sat Jan 01 00:00:00 EST 2000}
}
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Works referenced in this record:
Microfabricated silicon gas chromatographic microchannels: fabrication and performance
conference, August 1998
- Matzke, Carolyn M.; Kottenstette, Richard J.; Casalnuovo, Stephen A.
- Micromachining and Microfabrication, SPIE Proceedings
Low temperature deposition of silicon nitride films by distributed electron cyclotron resonance plasma‐enhanced chemical vapor deposition
journal, November 1995
- Sitbon, S.; Hugon, M. C.; Agius, B.
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 13, Issue 6
Quartz channel fabrication for electrokinetically driven separations
conference, September 1998
- Matzke, Carolyn M.; Arnold, D. W.; Ashby, Carol I. H.
- Micromachining and Microfabrication, SPIE Proceedings