Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers
Abstract
A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.
- Inventors:
-
- Berkeley, CA
- Berlin, DE
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- OSTI Identifier:
- 872800
- Patent Number(s):
- 6011810
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- doping; germanium; silicon; crystals; non-hydrogenic; acceptors; infrared; lasers; method; semiconductors; binding; energies; larger; energy; laser; photons; beryllium; zinc; copper; comprising; doped; double; triple; acceptor; dopants; permitting; tuned; continuously; terahertz; operate; continuous; mode; operating; semiconductor; population; inversion; closed; cycle; refrigerator; silicon crystal; infrared laser; population inversion; closed cycle; binding energies; laser comprising; non-hydrogenic acceptors; crystals doped; infrared lasers; cycle refrigerator; doping semiconductor; doped laser; /372/257/
Citation Formats
Haller, Eugene E, and Brundermann, Erik. Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers. United States: N. p., 2000.
Web.
Haller, Eugene E, & Brundermann, Erik. Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers. United States.
Haller, Eugene E, and Brundermann, Erik. Sat .
"Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers". United States. https://www.osti.gov/servlets/purl/872800.
@article{osti_872800,
title = {Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers},
author = {Haller, Eugene E and Brundermann, Erik},
abstractNote = {A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 2000},
month = {Sat Jan 01 00:00:00 EST 2000}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Stimulated far-infrared emission from copper-doped germanium crystals
journal, March 1997
- Sirmain, G.; Reichertz, L. A.; Dubon, O. D.
- Applied Physics Letters, Vol. 70, Issue 13
Miniaturization of p ‐Ge lasers: Progress toward continuous wave operation
journal, March 1996
- Bründermann, E.; Linhart, A. M.; Röser, H. P.
- Applied Physics Letters, Vol. 68, Issue 10
Double acceptor doped Ge: A new medium for inter‐valence‐band lasers
journal, May 1996
- Bründermann, E.; Linhart, A. M.; Reichertz, L.
- Applied Physics Letters, Vol. 68, Issue 22
Polarization of the far‐infrared laser oscillation in p ‐Ge in Faraday configuration
journal, November 1987
- Komiyama, Susumu; Kuroda, Shinji; Yamamoto, Toyoji
- Journal of Applied Physics, Vol. 62, Issue 9