Phosphorous doping a semiconductor particle
Abstract
A method (10) of phosphorus doping a semiconductor particle using ammonium phosphate. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried (16, 18), with the phosphorus then being diffused (20) into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement.
- Inventors:
-
- 18912 Ravenglen Ct, Dallas, TX 75287
- 703 Horizon, Murphy, TX 75094
- Issue Date:
- OSTI Identifier:
- 872399
- Patent Number(s):
- 5926727
- Application Number:
- 08/570,028
- Assignee:
- Stevens, Gary Don (18912 Ravenglen Ct, Dallas, TX 75287);Reynolds, Jeffrey Scott (703 Horizon, Murphy, TX 75094)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- ZAI-4-11294-04
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- phosphorous; doping; semiconductor; particle; method; 10; phosphorus; ammonium; phosphate; p-doped; silicon; sphere; mixed; diluted; solution; predetermined; concentration; spheres; dried; 16; 18; diffused; 20; create; shallow; deep; p-n; junction; psg; glass; layer; formed; surface; diffusion; process; subsequent; segregation; anneal; utilized; strip; metal; impurities; near; hf; procedure; removed; restricted; chemical; inexpensive; pose; special; shipping; handling; disposal; requirement; p-n junction; doped silicon; ammonium phosphate; metal impurities; semiconductor particle; predetermined concentration; silicon sphere; strip metal; diffusion process; diluted solution; /438/
Citation Formats
Stevens, Gary Don, and Reynolds, Jeffrey Scott. Phosphorous doping a semiconductor particle. United States: N. p., 1999.
Web.
Stevens, Gary Don, & Reynolds, Jeffrey Scott. Phosphorous doping a semiconductor particle. United States.
Stevens, Gary Don, and Reynolds, Jeffrey Scott. Tue .
"Phosphorous doping a semiconductor particle". United States. https://www.osti.gov/servlets/purl/872399.
@article{osti_872399,
title = {Phosphorous doping a semiconductor particle},
author = {Stevens, Gary Don and Reynolds, Jeffrey Scott},
abstractNote = {A method (10) of phosphorus doping a semiconductor particle using ammonium phosphate. A p-doped silicon sphere is mixed with a diluted solution of ammonium phosphate having a predetermined concentration. These spheres are dried (16, 18), with the phosphorus then being diffused (20) into the sphere to create either a shallow or deep p-n junction. A good PSG glass layer is formed on the surface of the sphere during the diffusion process. A subsequent segregation anneal process is utilized to strip metal impurities from near the p-n junction into the glass layer. A subsequent HF strip procedure is then utilized to removed the PSG layer. Ammonium phosphate is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirement.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 20 00:00:00 EDT 1999},
month = {Tue Jul 20 00:00:00 EDT 1999}
}