Chemical vapor deposition of W-Si-N and W-B-N

Fleming, James G; Roherty-Osmun, Elizabeth Lynn; Smith, Paul M; Custer, Jonathan S; Jones, Ronald V; Nicolet, Marc-A; Madar, Roland; Bernard, Claude

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Title: Chemical vapor deposition of W-Si-N and W-B-N

Abstract

A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF.sub.6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin film useful for diffusion barrier and micromachining applications.

Inventors:

Fleming, James G ^[1]; Roherty-Osmun, Elizabeth Lynn ^[1]; Smith, Paul M ^[1]; Custer, Jonathan S ^[1]; Jones, Ronald V ^[1]; Nicolet, Marc-A ^[2]; Madar, Roland ^[3]; Bernard, Claude ^[4]

Albuquerque, NM
Pasadena, CA
Eybens, FR
Brie et Angonnes, FR

Issue Date:: Fri Jan 01 00:00:00 EST 1999

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

OSTI Identifier:: 872354

Patent Number(s):: 5916634

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Classifications (CPCs):: C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C16/34 - Nitrides {

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/76843 - {formed in openings in a dielectric}

Show less

DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: chemical; vapor; deposition; w-si-n; w-b-n; method; depositing; ternary; refractory; based; film; substrate; employing; precursor; sources; tungsten; comprising; wf; silicon; boron; nitrogen; result; useful; diffusion; barrier; micromachining; applications; diffusion barrier; chemical vapor; vapor deposition; refractory base; /427/

Citation Formats


                    Fleming, James G, Roherty-Osmun, Elizabeth Lynn, Smith, Paul M, Custer, Jonathan S, Jones, Ronald V, Nicolet, Marc-A, Madar, Roland, and Bernard, Claude. Chemical vapor deposition of W-Si-N and W-B-N.  United States: N. p., 1999. 
        Web.

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                    Fleming, James G, Roherty-Osmun, Elizabeth Lynn, Smith, Paul M, Custer, Jonathan S, Jones, Ronald V, Nicolet, Marc-A, Madar, Roland, & Bernard, Claude. Chemical vapor deposition of W-Si-N and W-B-N.  United States.

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                    Fleming, James G, Roherty-Osmun, Elizabeth Lynn, Smith, Paul M, Custer, Jonathan S, Jones, Ronald V, Nicolet, Marc-A, Madar, Roland, and Bernard, Claude. Fri .  
        "Chemical vapor deposition of W-Si-N and W-B-N".  United States.  https://www.osti.gov/servlets/purl/872354.

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@article{osti_872354,

  title        = {Chemical vapor deposition of W-Si-N and W-B-N},

  author       = {Fleming, James G and Roherty-Osmun, Elizabeth Lynn and Smith, Paul M and Custer, Jonathan S and Jones, Ronald V and Nicolet, Marc-A and Madar, Roland and Bernard, Claude},

  abstractNote = {A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF.sub.6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin film useful for diffusion barrier and micromachining applications.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Fri Jan 01 00:00:00 EST 1999},

  month        = {Fri Jan 01 00:00:00 EST 1999}

}

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Works referenced in this record:

Morphology and Thermal Stability of Me-Si-N (Me=Re, W, Ta) for Microelectronics
journal, June 1995

Dutron, A. -M.; Blanquet, E.; Ghetta, V.
Le Journal de Physique IV, Vol. 05, Issue C5
https://doi.org/10.1051/jphyscol:19955135

Sputtered Ta-Si-N diffusion barriers in Cu metallizations for Si
journal, June 1991

Kolawa, E.; Pokela, P. J.; Reid, J. S.
IEEE Electron Device Letters, Vol. 12, Issue 6
https://doi.org/10.1109/55.82074

Amorphous W40Re40B20 diffusion barriers for /Al and /Cu metallizations
journal, December 1993

Kolawa, E.; Sun, X.; Reid, J. S.
Thin Solid Films, Vol. 236, Issue 1-2
https://doi.org/10.1016/0040-6090(93)90686-J

TiWN Schottky Contacts to n - G a _0.51 I n _0.49 P
journal, August 1994

Lin, Kun-Chuan; Chang, Edward Y.; Wang, Sheng-Ping
Japanese Journal of Applied Physics, Vol. 33, Issue Part 1, No. 8
https://doi.org/10.1143/JJAP.33.4546

Thermodynamics of (Cr, Mo, Nb, Ta, V, or W)–Si–Cu ternary systems
journal, September 1992

Reid, J. S.; Kolawa, E.; Nicolet, M-A.
Journal of Materials Research, Vol. 7, Issue 9
https://doi.org/10.1557/JMR.1992.2424

TiCN: A new chemical vapor deposited contact barrier metallization for submicron devices
journal, November 1994

Eizenberg, M.; Littau, K.; Ghanayem, S.
Applied Physics Letters, Vol. 65, Issue 19
https://doi.org/10.1063/1.112693

Evaluation of amorphous (Mo, Ta, W)SiN diffusion barriers for 〈Si〉|Cu metallizations
journal, December 1993

Reid, J. S.; Kolawa, E.; Ruiz, R. P.
Thin Solid Films, Vol. 236, Issue 1-2
https://doi.org/10.1016/0040-6090(93)90689-M

W-B-N diffusion barriers for Si/Cu metallizations
journal, June 1995

Reid, J. S.; Liu, R. Y.; Smith, Paul Martin
Thin Solid Films, Vol. 262, Issue 1-2
https://doi.org/10.1016/0040-6090(94)05810-5

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Similar Records

Title: Chemical vapor deposition of W-Si-N and W-B-N

Abstract

Citation Formats

Morphology and Thermal Stability of Me-Si-N (Me=Re, W, Ta) for Microelectronics journal, June 1995

Sputtered Ta-Si-N diffusion barriers in Cu metallizations for Si journal, June 1991

Amorphous W40Re40B20 diffusion barriers for /Al and /Cu metallizations journal, December 1993

TiWN Schottky Contacts to n - G a 0.51 I n 0.49 P journal, August 1994

Thermodynamics of (Cr, Mo, Nb, Ta, V, or W)–Si–Cu ternary systems journal, September 1992

TiCN: A new chemical vapor deposited contact barrier metallization for submicron devices journal, November 1994

Evaluation of amorphous (Mo, Ta, W)SiN diffusion barriers for 〈Si〉|Cu metallizations journal, December 1993

W-B-N diffusion barriers for Si/Cu metallizations journal, June 1995

Morphology and Thermal Stability of Me-Si-N (Me=Re, W, Ta) for Microelectronics
journal, June 1995

Sputtered Ta-Si-N diffusion barriers in Cu metallizations for Si
journal, June 1991

Amorphous W40Re40B20 diffusion barriers for /Al and /Cu metallizations
journal, December 1993

TiWN Schottky Contacts to n - G a _0.51 I n _0.49 P
journal, August 1994

Thermodynamics of (Cr, Mo, Nb, Ta, V, or W)–Si–Cu ternary systems
journal, September 1992

TiCN: A new chemical vapor deposited contact barrier metallization for submicron devices
journal, November 1994

Evaluation of amorphous (Mo, Ta, W)SiN diffusion barriers for 〈Si〉|Cu metallizations
journal, December 1993

W-B-N diffusion barriers for Si/Cu metallizations
journal, June 1995