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Title: Electrochemical formation of field emitters

Abstract

Electrochemical formation of field emitters, particularly useful in the fabrication of flat panel displays. The fabrication involves field emitting points in a gated field emitter structure. Metal field emitters are formed by electroplating and the shape of the formed emitter is controlled by the potential imposed on the gate as well as on a separate counter electrode. This allows sharp emitters to be formed in a more inexpensive and manufacturable process than vacuum deposition processes used at present. The fabrication process involves etching of the gate metal and the dielectric layer down to the resistor layer, and then electroplating the etched area and forming an electroplated emitter point in the etched area.

Inventors:
 [1]
  1. Berkeley, CA
Issue Date:
Research Org.:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
OSTI Identifier:
872191
Patent Number(s):
5882503
Assignee:
Regents of University of California (Oakland, CA)
Patent Classifications (CPCs):
C - CHEMISTRY C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES C25D - PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
electrochemical; formation; field; emitters; particularly; useful; fabrication; flat; panel; displays; involves; emitting; gated; emitter; structure; metal; formed; electroplating; shape; controlled; potential; imposed; gate; separate; counter; electrode; allows; sharp; inexpensive; manufacturable; process; vacuum; deposition; processes; etching; dielectric; layer; resistor; etched; forming; electroplated; vacuum deposition; dielectric layer; process involves; particularly useful; deposition process; counter electrode; fabrication process; field emitter; flat panel; field emitters; deposition processes; gate metal; panel displays; panel display; emitter structure; gated field; electrochemical formation; manufacturable process; /205/445/

Citation Formats

Bernhardt, Anthony F. Electrochemical formation of field emitters. United States: N. p., 1999. Web.
Bernhardt, Anthony F. Electrochemical formation of field emitters. United States.
Bernhardt, Anthony F. Fri . "Electrochemical formation of field emitters". United States. https://www.osti.gov/servlets/purl/872191.
@article{osti_872191,
title = {Electrochemical formation of field emitters},
author = {Bernhardt, Anthony F},
abstractNote = {Electrochemical formation of field emitters, particularly useful in the fabrication of flat panel displays. The fabrication involves field emitting points in a gated field emitter structure. Metal field emitters are formed by electroplating and the shape of the formed emitter is controlled by the potential imposed on the gate as well as on a separate counter electrode. This allows sharp emitters to be formed in a more inexpensive and manufacturable process than vacuum deposition processes used at present. The fabrication process involves etching of the gate metal and the dielectric layer down to the resistor layer, and then electroplating the etched area and forming an electroplated emitter point in the etched area.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 1999},
month = {Fri Jan 01 00:00:00 EST 1999}
}

Works referenced in this record:

Low-voltage field emission from tungsten fiber arrays in a stabilized zirconia matrix
journal, June 1987


Vacuum microelectronics-1992
journal, June 1992