Growth of oxide exchange bias layers
Abstract
An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bia layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200.degree. C., the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 .ANG./sec. The resulting NiO film was amorphous.
- Inventors:
-
- Fremont, CA
- Bloomington, MN
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- OSTI Identifier:
- 871722
- Patent Number(s):
- 5783262
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- growth; oxide; exchange; bias; layers; nio; coo; nicoo; antiferromagnetic; layer; produced; beam; sputtering; target; pure; argon; gas; oxygen; introduced; example; magnetoresistive; readback; heads; shift; hysteresis; loops; ferromagnetic; films; zero; field; axis; bia; fabricated; substrate; temperature; 200; degree; voltage; 1000v; current; 20; deposition; rate; ang; resulting; film; amorphous; oxide layers; zero field; beam current; oxygen gas; oxide layer; deposition rate; substrate temperature; beam sputtering; sputtering gas; gas introduced; rate temperature; hysteresis loop; exchange bias; /427/204/
Citation Formats
Chaiken, Alison, and Michel, Richard P. Growth of oxide exchange bias layers. United States: N. p., 1998.
Web.
Chaiken, Alison, & Michel, Richard P. Growth of oxide exchange bias layers. United States.
Chaiken, Alison, and Michel, Richard P. Tue .
"Growth of oxide exchange bias layers". United States. https://www.osti.gov/servlets/purl/871722.
@article{osti_871722,
title = {Growth of oxide exchange bias layers},
author = {Chaiken, Alison and Michel, Richard P},
abstractNote = {An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bia layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200.degree. C., the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 .ANG./sec. The resulting NiO film was amorphous.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 21 00:00:00 EDT 1998},
month = {Tue Jul 21 00:00:00 EDT 1998}
}
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Works referenced in this record:
NiO exchange bias layers grown by direct ion beam sputtering of a nickel oxide target
journal, January 1996
- Michel, R. P.; Chaiken, A.; Kim, Y. K.
- IEEE Transactions on Magnetics, Vol. 32, Issue 5