Semiconductor tunnel junction with enhancement layer

Klem, John F; Zolper, John C

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Title: Semiconductor tunnel junction with enhancement layer

Abstract

The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.

Inventors:

Klem, John F ^[1]; Zolper, John C ^[2]

Sandia Park, NM
Albuquerque, NM

Issue Date:: Wed Jan 01 00:00:00 EST 1997

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

OSTI Identifier:: 871198

Patent Number(s):: 5679963

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L29/205 - in different semiconductor regions {, e.g. heterojunctions}
H01L29/88 - Tunnel-effect diodes
H01L31/06 - characterised by at least one potential-jump barrier or surface barrier
H01L31/0693 - the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
H01L31/0735 - comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L33/0016 - {having at least two p-n junctions}
H01L33/0025 - {comprising only AIIIBV compounds}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
H01S5/3095 - {Tunnel junction}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/544 - Solar cells from Group III-V materials

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DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: semiconductor; tunnel; junction; enhancement; layer; incorporation; pseudomorphic; gaassb; runnel; diode; structure; affords; degree; freedom; designing; junctions; p-n; device; interconnects; previously; doping; levels; varied; control; tunneling; properties; valence; band; alignment; respect; surrounding; materials; greatly; relax; requirements; tunnel junction; p-n junction; valence band; structure affords; diode structure; gaassb layer; enhancement layer; sb layer; doping levels; junction device; /257/

Citation Formats


                    Klem, John F, and Zolper, John C. Semiconductor tunnel junction with enhancement layer.  United States: N. p., 1997. 
        Web.

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                    Klem, John F, & Zolper, John C. Semiconductor tunnel junction with enhancement layer.  United States.

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                    Klem, John F, and Zolper, John C. Wed .  
        "Semiconductor tunnel junction with enhancement layer".  United States.  https://www.osti.gov/servlets/purl/871198.

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@article{osti_871198,

  title        = {Semiconductor tunnel junction with enhancement layer},

  author       = {Klem, John F and Zolper, John C},

  abstractNote = {The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Wed Jan 01 00:00:00 EST 1997},

  month        = {Wed Jan 01 00:00:00 EST 1997}

}

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Works referenced in this record:

A 27.3% efficient Ga_0.5In_0.5P/GaAs tandem solar cell
journal, February 1990

Olson, J. M.; Kurtz, S. R.; Kibbler, A. E.
Applied Physics Letters, Vol. 56, Issue 7, p. 623-625
https://doi.org/10.1063/1.102717

n ‐ p ‐( p ⁺ ‐ n ⁺ )‐ n Al _y Ga _{1− y} As‐GaAs‐In _x Ga _{1− x} As quantum‐well laser with p ⁺ ‐ n ⁺ GaAs‐InGaAs tunnel contact on n ‐GaAs
journal, May 1993

Sugg, A. R.; Chen, E. I.; Richard, T. A.
Applied Physics Letters, Vol. 62, Issue 20
https://doi.org/10.1063/1.109338

Growth and properties of GaAsSb/InGaAs superlattices on InP
journal, May 1991

Klem, J. F.; Kurtz, S. R.; Datye, A.
Journal of Crystal Growth, Vol. 111, Issue 1-4
https://doi.org/10.1016/0022-0248(91)91053-D

GaAs‐AlGaAs tunnel junctions for multigap cascade solar cells
journal, January 1982

Miller, D. L.; Zehr, S. W.; Harris, J. S.
Journal of Applied Physics, Vol. 53, Issue 1
https://doi.org/10.1063/1.329940

AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application
journal, August 1993

Jung, D.; Parker, C. A.; Ramdani, J.
Journal of Applied Physics, Vol. 74, Issue 3, p. 2090-2093
https://doi.org/10.1063/1.354753

Monolithic, series-connected InP/Ga/sub 0.47/In/sub 0.53/As tandem solar cells
conference, January 1993

Wanlass, M. W.; Ward, J. S.; Emery, K. A.
Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9)
https://doi.org/10.1109/PVSC.1993.347021

In _{1− x} Ga _x As‐GaSb _{1− y} As _y heterojunctions by molecular beam epitaxy
journal, August 1977

Sakaki, H.; Chang, L. L.; Ludeke, R.
Applied Physics Letters, Vol. 31, Issue 3
https://doi.org/10.1063/1.89609

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Similar Records

Title: Semiconductor tunnel junction with enhancement layer

Abstract

Citation Formats

A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell journal, February 1990

n ‐ p ‐( p + ‐ n + )‐ n Al y Ga 1− y As‐GaAs‐In x Ga 1− x As quantum‐well laser with p + ‐ n + GaAs‐InGaAs tunnel contact on n ‐GaAs journal, May 1993

Growth and properties of GaAsSb/InGaAs superlattices on InP journal, May 1991

GaAs‐AlGaAs tunnel junctions for multigap cascade solar cells journal, January 1982

AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application journal, August 1993

Monolithic, series-connected InP/Ga/sub 0.47/In/sub 0.53/As tandem solar cells conference, January 1993

In 1− x Ga x As‐GaSb 1− y As y heterojunctions by molecular beam epitaxy journal, August 1977

A 27.3% efficient Ga_0.5In_0.5P/GaAs tandem solar cell
journal, February 1990

n ‐ p ‐( p ⁺ ‐ n ⁺ )‐ n Al _y Ga _{1− y} As‐GaAs‐In _x Ga _{1− x} As quantum‐well laser with p ⁺ ‐ n ⁺ GaAs‐InGaAs tunnel contact on n ‐GaAs
journal, May 1993

Growth and properties of GaAsSb/InGaAs superlattices on InP
journal, May 1991

GaAs‐AlGaAs tunnel junctions for multigap cascade solar cells
journal, January 1982

AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application
journal, August 1993

Monolithic, series-connected InP/Ga/sub 0.47/In/sub 0.53/As tandem solar cells
conference, January 1993

In _{1− x} Ga _x As‐GaSb _{1− y} As _y heterojunctions by molecular beam epitaxy
journal, August 1977