Process for preparing silicon carbide foam
Abstract
A method of preparing near net shape, monolithic, porous SiC foams is disclosed. Organosilicon precursors are used to produce polymeric gels by thermally induced phase separation, wherein, a sufficiently concentrated solution of an organosilicon polymer is cooled below its solidification temperature to form a gel. Following solvent removal from the gel, the polymer foam is pretreated in an oxygen plasma in order to raise its glass transition temperature. The pretreated foam is then pyrolized in an inert atmosphere to form a SiC foam.
- Inventors:
-
- Livermore, CA
- Albuquerque, NM
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 871148
- Patent Number(s):
- 5668188
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C - CHEMISTRY C08 - ORGANIC MACROMOLECULAR COMPOUNDS C08J - WORKING-UP
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- process; preparing; silicon; carbide; foam; method; near; net; shape; monolithic; porous; sic; foams; disclosed; organosilicon; precursors; produce; polymeric; gels; thermally; induced; phase; separation; sufficiently; concentrated; solution; polymer; cooled; below; solidification; temperature; form; following; solvent; removal; pretreated; oxygen; plasma; raise; glass; transition; pyrolized; inert; atmosphere; concentrated solution; cooled below; phase separation; thermally induced; polymer foam; silicon carbide; inert atmosphere; transition temperature; glass transition; near net; oxygen plasma; net shape; preparing silicon; induced phase; following solvent; organosilicon polymer; polymeric gels; produce polymer; /423/264/501/502/521/
Citation Formats
Whinnery, LeRoy Louis, Nichols, Monte Carl, Wheeler, David Roger, and Loy, Douglas Anson. Process for preparing silicon carbide foam. United States: N. p., 1997.
Web.
Whinnery, LeRoy Louis, Nichols, Monte Carl, Wheeler, David Roger, & Loy, Douglas Anson. Process for preparing silicon carbide foam. United States.
Whinnery, LeRoy Louis, Nichols, Monte Carl, Wheeler, David Roger, and Loy, Douglas Anson. Wed .
"Process for preparing silicon carbide foam". United States. https://www.osti.gov/servlets/purl/871148.
@article{osti_871148,
title = {Process for preparing silicon carbide foam},
author = {Whinnery, LeRoy Louis and Nichols, Monte Carl and Wheeler, David Roger and Loy, Douglas Anson},
abstractNote = {A method of preparing near net shape, monolithic, porous SiC foams is disclosed. Organosilicon precursors are used to produce polymeric gels by thermally induced phase separation, wherein, a sufficiently concentrated solution of an organosilicon polymer is cooled below its solidification temperature to form a gel. Following solvent removal from the gel, the polymer foam is pretreated in an oxygen plasma in order to raise its glass transition temperature. The pretreated foam is then pyrolized in an inert atmosphere to form a SiC foam.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1997},
month = {Wed Jan 01 00:00:00 EST 1997}
}
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Works referenced in this record:
Characterization of Organosilicon-Infiltrated Porous Reaction-Sintered Si3N4
journal, November 1978
- Mazdiyasni, K. S.; West, Robert; David, Larry D.
- Journal of the American Ceramic Society, Vol. 61, Issue 11-12