Crystallization from high temperature solutions of Si in Cu/Al solvent
Abstract
A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 3.times.10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850.degree. to about 1100.degree. C. in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.
- Inventors:
-
- Evergreen, CO
- Golden, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 870552
- Patent Number(s):
- 5544616
- Application Number:
- 08/249,957
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- crystallization; temperature; solutions; cu; solvent; liquid; phase; epitaxy; method; forming; crystalline; layers; device; quality; silicon; times; 10; 16; atoms; cc; impurity; comprising; preparing; saturated; solution; 20; 40; range; 850; degree; 1100; inert; gas; immersing; partially; substrate; super; saturating; lowering; holding; period; time; sufficient; precipitate; form; layer; withdrawing; saturated solution; device quality; liquid solution; time sufficient; temperature range; liquid phase; inert gas; phase epitaxy; saturated liquid; quality silicon; cc impurity; crystalline layer; temperature solutions; epitaxy method; cu atoms; crystalline layers; /117/
Citation Formats
Ciszek, Theodore F, and Wang, Tihu. Crystallization from high temperature solutions of Si in Cu/Al solvent. United States: N. p., 1996.
Web.
Ciszek, Theodore F, & Wang, Tihu. Crystallization from high temperature solutions of Si in Cu/Al solvent. United States.
Ciszek, Theodore F, and Wang, Tihu. Mon .
"Crystallization from high temperature solutions of Si in Cu/Al solvent". United States. https://www.osti.gov/servlets/purl/870552.
@article{osti_870552,
title = {Crystallization from high temperature solutions of Si in Cu/Al solvent},
author = {Ciszek, Theodore F and Wang, Tihu},
abstractNote = {A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 3.times.10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850.degree. to about 1100.degree. C. in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 1996},
month = {Mon Jan 01 00:00:00 EST 1996}
}
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Works referenced in this record:
Si thin layer growth from metal solutions on single-crystal and cast metallurgical-grade multicrystalline Si substrates
conference, January 1993
- Ciszek, T. F.; Wang, T. H.; Wu, X.
- Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9)