Process for producing cadmium sulfide on a cadmium telluride surface
Abstract
A process for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness.
- Inventors:
-
- Lakewood, CO
- Longmont, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 870538
- Patent Number(s):
- 5541118
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- process; producing; cadmium; sulfide; telluride; surface; layer; employed; photovoltaic; device; comprises; providing; exposed; hydrogen; plasma; exposure; flow; rate; time; temperature; sufficient; permit; reaction; form; accomplish; passivation; addition; heterojunction; interface; formed; thickness; sufficient thickness; comprises providing; flow rate; photovoltaic device; hydrogen sulfide; temperature sufficient; process comprises; cadmium telluride; cadmium sulfide; exposure time; telluride surface; sulfide layer; sulfide form; /438/136/257/427/
Citation Formats
Levi, Dean H, Nelson, Art J, and Ahrenkiel, Richard K. Process for producing cadmium sulfide on a cadmium telluride surface. United States: N. p., 1996.
Web.
Levi, Dean H, Nelson, Art J, & Ahrenkiel, Richard K. Process for producing cadmium sulfide on a cadmium telluride surface. United States.
Levi, Dean H, Nelson, Art J, and Ahrenkiel, Richard K. Mon .
"Process for producing cadmium sulfide on a cadmium telluride surface". United States. https://www.osti.gov/servlets/purl/870538.
@article{osti_870538,
title = {Process for producing cadmium sulfide on a cadmium telluride surface},
author = {Levi, Dean H and Nelson, Art J and Ahrenkiel, Richard K},
abstractNote = {A process for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 1996},
month = {Mon Jan 01 00:00:00 EST 1996}
}
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