Fabrication of optically reflecting ohmic contacts for semiconductor devices
Abstract
A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 869960
- Patent Number(s):
- 5429985
- Application Number:
- 08/155,386
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 1994 Jan 18
- Country of Publication:
- United States
- Language:
- English
- Subject:
- fabrication; optically; reflecting; ohmic; contacts; semiconductor; devices; method; provided; produce; low-resistivity; contact; optical; reflectivity; device; formed; coating; substrate; metal; film; processing; wafer; illuminating; electromagnetic; radiation; predetermined; wavelength; energy; level; front; period; time; produces; epitaxial; alloy; layer; crystalline; provides; reflectance; metal film; predetermined wavelength; energy level; semiconductor substrate; metal layer; electromagnetic radiation; semiconductor device; ohmic contact; semiconductor devices; alloy layer; layer provides; predetermined period; method produces; ohmic contacts; optical reflectivity; optically processing; crystalline substrate; method produce; /438/136/
Citation Formats
Sopori, Bhushan L. Fabrication of optically reflecting ohmic contacts for semiconductor devices. United States: N. p., 1995.
Web.
Sopori, Bhushan L. Fabrication of optically reflecting ohmic contacts for semiconductor devices. United States.
Sopori, Bhushan L. Sun .
"Fabrication of optically reflecting ohmic contacts for semiconductor devices". United States. https://www.osti.gov/servlets/purl/869960.
@article{osti_869960,
title = {Fabrication of optically reflecting ohmic contacts for semiconductor devices},
author = {Sopori, Bhushan L.},
abstractNote = {A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 1995},
month = {Sun Jan 01 00:00:00 EST 1995}
}
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