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Title: High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O

Abstract

A process for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO.sub.3 crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O.sub.3, followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry.

Inventors:
 [1];  [2];  [3];  [4];  [5];  [5];  [5];  [5]
  1. Evergreen, CO
  2. Placitas, NM
  3. Madison, WI
  4. Sunnyvale, CA
  5. Albuquerque, NM
Issue Date:
Research Org.:
AT&T
OSTI Identifier:
869576
Patent Number(s):
5358928
Application Number:
07/949,098
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
temperature; superconductor; step-edge; josephson; junctions; ti-ca-ba-cu-o; process; formulating; non-hysteretic; hysteretic; materials; results; ability; operate; temperatures; maintaining; uniformity; quality; junction; formed; step-etching; laalo; crystal; substrate; depositing; film; tlcabacuo; covering; step; forming; grain; boundary; subsequent; form; add; capacitance; current; embodiment; accomplished; adding; dielectric; layer; laa1o; followed; cap; normal; metal; titanium; gold; patterned; desired; geometry; josephson junction; cap layer; josephson junctions; normal metal; temperature superconductor; dielectric layer; grain boundary; crystal substrate; metal cap; /505/257/427/

Citation Formats

Ginley, David S, Hietala, Vincent M, Hohenwarter, Gert K. G., Martens, Jon S, Plut, Thomas A, Tigges, Chris P, Vawter, Gregory A, and Zipperian, Thomas E. High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O. United States: N. p., 1994. Web.
Ginley, David S, Hietala, Vincent M, Hohenwarter, Gert K. G., Martens, Jon S, Plut, Thomas A, Tigges, Chris P, Vawter, Gregory A, & Zipperian, Thomas E. High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O. United States.
Ginley, David S, Hietala, Vincent M, Hohenwarter, Gert K. G., Martens, Jon S, Plut, Thomas A, Tigges, Chris P, Vawter, Gregory A, and Zipperian, Thomas E. Tue . "High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O". United States. https://www.osti.gov/servlets/purl/869576.
@article{osti_869576,
title = {High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O},
author = {Ginley, David S and Hietala, Vincent M and Hohenwarter, Gert K. G. and Martens, Jon S and Plut, Thomas A and Tigges, Chris P and Vawter, Gregory A and Zipperian, Thomas E},
abstractNote = {A process for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO.sub.3 crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O.sub.3, followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 25 00:00:00 EDT 1994},
month = {Tue Oct 25 00:00:00 EDT 1994}
}

Works referenced in this record:

Substrate step‐edge YBa 2 Cu 3 O 7 rf SQUIDs
journal, February 1991


Morphology control and high critical currents in superconducting thin films in the Tl-Ca-Ba-Cu-O system
journal, August 1989


Practical high T c Josephson junctions and dc SQUIDs operating above 85 K
journal, June 1991


Bi‐epitaxial grain boundary junctions in YBa 2 Cu 3 O 7
journal, August 1991


Tl‐Ca‐Ba‐Cu‐O step‐edge Josephson junctions
journal, March 1992


Fabrication of Tl‐Ca‐Ba‐Cu‐O superconducting thin films on LaAlO 3 substrates
journal, April 1990


Fabrication of TlCaBaCuO step‐edge Josephson junctions with hysteretic behavior
journal, February 1992


Principles of Superconductive Devices and Circuits
journal, February 1982


Fabrication of Tunnel Junction Structures
book, January 1989


High-T/sub c/ thin-film magnetometer
journal, March 1991


High-speed Josephson processor technology
journal, March 1991


Quantum limited quasiparticle mixers at 100 GHz
journal, March 1991


Ideal tunneling characteristics in Ba 1− x K x BiO 3 point‐contact junctions with Au and Nb tips
journal, November 1990