Method for anisotropic etching in the manufacture of semiconductor devices
Abstract
Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by atomic oxygen beams (translational energies of 0.2-20 eV, preferably 1-10 eV). Etching with hyperthermal (kinetic energy>1 eV) oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask-protected areas.
- Inventors:
-
- Seabrook, TX
- Santa Fe, NM
- Issue Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- OSTI Identifier:
- 869080
- Patent Number(s):
- 5271800
- Assignee:
- United States of America as represented by Administrator of (Washington, DC)
- Patent Classifications (CPCs):
-
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; anisotropic; etching; manufacture; semiconductor; devices; hydrocarbon; polymer; coatings; microelectronic; manufacturing; processes; anisotropically; etched; atomic; oxygen; beams; translational; energies; 2-20; preferably; 1-10; hyperthermal; kinetic; energy; atom; species; obtains; highly; sharp; boundaries; mask-protected; polymer coating; manufacturing process; semiconductor device; semiconductor devices; kinetic energy; atomic oxygen; polymer coatings; anisotropic etching; oxygen atom; anisotropically etched; manufacturing processes; /438/250/430/
Citation Formats
Koontz, Steven L, and Cross, Jon B. Method for anisotropic etching in the manufacture of semiconductor devices. United States: N. p., 1993.
Web.
Koontz, Steven L, & Cross, Jon B. Method for anisotropic etching in the manufacture of semiconductor devices. United States.
Koontz, Steven L, and Cross, Jon B. Fri .
"Method for anisotropic etching in the manufacture of semiconductor devices". United States. https://www.osti.gov/servlets/purl/869080.
@article{osti_869080,
title = {Method for anisotropic etching in the manufacture of semiconductor devices},
author = {Koontz, Steven L and Cross, Jon B},
abstractNote = {Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by atomic oxygen beams (translational energies of 0.2-20 eV, preferably 1-10 eV). Etching with hyperthermal (kinetic energy>1 eV) oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask-protected areas.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 1993},
month = {Fri Jan 01 00:00:00 EST 1993}
}
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Works referenced in this record:
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Summary Abstract: Etching with directed beams of ions or radicals
journal, July 1987
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