Low temperature photochemical vapor deposition of alloy and mixed metal oxide films
Abstract
Method and apparatus for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure.
- Inventors:
-
- San Pablo, CA
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- OSTI Identifier:
- 868592
- Patent Number(s):
- 5171610
- Assignee:
- Regents of University of Calif. (Oakland, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- temperature; photochemical; vapor; deposition; alloy; mixed; metal; oxide; films; method; apparatus; formation; film; substrate; relatively; temperatures; precursor; containing; desired; constituents; positioned; adjacent; irradiated; light; wavelengths; selected; wavelength; range; dissociate; gas; provide; atoms; molecules; gases; deposit; formed; vaporization; materials; control; ratio; concentration; metals; total; pressure; wavelength range; selected wavelength; molecules containing; oxide films; mixed metal; chemical vapor; metal oxide; vapor deposition; vapor pressure; oxide film; positioned adjacent; precursor material; precursor materials; vaporization temperature; photochemical vapor; selected wave; temperature ph; /427/
Citation Formats
Liu, David K. Low temperature photochemical vapor deposition of alloy and mixed metal oxide films. United States: N. p., 1992.
Web.
Liu, David K. Low temperature photochemical vapor deposition of alloy and mixed metal oxide films. United States.
Liu, David K. Wed .
"Low temperature photochemical vapor deposition of alloy and mixed metal oxide films". United States. https://www.osti.gov/servlets/purl/868592.
@article{osti_868592,
title = {Low temperature photochemical vapor deposition of alloy and mixed metal oxide films},
author = {Liu, David K},
abstractNote = {Method and apparatus for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1992},
month = {Wed Jan 01 00:00:00 EST 1992}
}
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