Vapor deposition of thin films
Abstract
A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.
- Inventors:
-
- Los Alamos, NM
- (Los Alamos, NM)
- Issue Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- OSTI Identifier:
- 868473
- Patent Number(s):
- 5149596
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- W-7405-ENG-36
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- vapor; deposition; films; highly; pure; metal; film; nanocrystalline; structure; process; preparing; rhodium; iridium; molybdenum; tungsten; rhenium; platinum; palladium; plasma; assisted; chemical; allyl; disclosed; additionally; reducing; carbon; content; metallic; prepared; organometallic; precursor; compounds; plasma assisted; assisted chemical; metal films; metal film; chemical vapor; vapor deposition; crystalline structure; highly pure; precursor compounds; carbon content; precursor compound; metallic film; metallic precursor; line structure; /428/427/
Citation Formats
Smith, David C, Pattillo, Stevan G, Laia, Jr., Joseph R., and Sattelberger, Alfred P. Vapor deposition of thin films. United States: N. p., 1992.
Web.
Smith, David C, Pattillo, Stevan G, Laia, Jr., Joseph R., & Sattelberger, Alfred P. Vapor deposition of thin films. United States.
Smith, David C, Pattillo, Stevan G, Laia, Jr., Joseph R., and Sattelberger, Alfred P. Wed .
"Vapor deposition of thin films". United States. https://www.osti.gov/servlets/purl/868473.
@article{osti_868473,
title = {Vapor deposition of thin films},
author = {Smith, David C and Pattillo, Stevan G and Laia, Jr., Joseph R. and Sattelberger, Alfred P},
abstractNote = {A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1992},
month = {Wed Jan 01 00:00:00 EST 1992}
}
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Works referenced in this record:
Low‐temperature organometallic chemical vapor deposition of platinum
journal, October 1988
- Chen, Yea‐jer; Kaesz, Herbert D.; Thridandam, Hareesh
- Applied Physics Letters, Vol. 53, Issue 17
Deposition of thin rhodium films by plasma-enhanced chemical vapor deposition
journal, April 1989
- Etsp�ler, A.; Suhr, H.
- Applied Physics A Solids and Surfaces, Vol. 48, Issue 4