Device having two optical ports for switching applications
Abstract
A two-sided light-activatable semiconductor switch device having an optical port on each side thereof. The semiconductor device may be a p-i-n diode or of bulk intrinsic material. A two ported p-i-n diode, reverse-biased to "off" by a 1.3 kV dc power supply, conducted 192 A when activated by two 1 kW laser diode arrays, one for each optical port.
- Inventors:
-
- Cherry Hill, NJ
- Langehorne, PA
- Issue Date:
- Research Org.:
- RCA Corp
- OSTI Identifier:
- 867997
- Patent Number(s):
- 5051789
- Application Number:
- 07/595,528
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H03 - BASIC ELECTRONIC CIRCUITRY H03K - PULSE TECHNIQUE
- DOE Contract Number:
- AC03-87SF17127
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- device; optical; ports; switching; applications; two-sided; light-activatable; semiconductor; switch; p-i-n; diode; bulk; intrinsic; material; ported; reverse-biased; kv; dc; power; supply; conducted; 192; activated; kw; laser; arrays; diode arrays; dc power; power supply; laser diode; semiconductor device; diode array; semiconductor switch; p-i-n diode; switch device; switching applications; /257/250/
Citation Formats
Rosen, Ayre, and Stabile, Paul J. Device having two optical ports for switching applications. United States: N. p., 1991.
Web.
Rosen, Ayre, & Stabile, Paul J. Device having two optical ports for switching applications. United States.
Rosen, Ayre, and Stabile, Paul J. Tue .
"Device having two optical ports for switching applications". United States. https://www.osti.gov/servlets/purl/867997.
@article{osti_867997,
title = {Device having two optical ports for switching applications},
author = {Rosen, Ayre and Stabile, Paul J},
abstractNote = {A two-sided light-activatable semiconductor switch device having an optical port on each side thereof. The semiconductor device may be a p-i-n diode or of bulk intrinsic material. A two ported p-i-n diode, reverse-biased to "off" by a 1.3 kV dc power supply, conducted 192 A when activated by two 1 kW laser diode arrays, one for each optical port.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 24 00:00:00 EDT 1991},
month = {Tue Sep 24 00:00:00 EDT 1991}
}
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