Process for the deposition of high temperature stress and oxidation resistant coatings on silicon-based substrates
Abstract
A process for depositing a high temperature stress and oxidation resistant coating on a silicon nitride- or silicon carbide-based substrate body. A gas mixture is passed over the substrate at about 900.degree.-1500.degree. C. and about 1 torr to about ambient pressure. The gas mixture includes one or more halide vapors with other suitable reactant gases. The partial pressure ratios, flow rates, and process times are sufficient to deposit a continuous, fully dense, adherent coating. The halide and other reactant gases are gradually varied during deposition so that the coating is a graded coating of at least two layers. Each layer is a graded layer changing in composition from the material over which it is deposited to the material of the layer and further to the material, if any, deposited thereon, so that no clearly defined compositional interfaces exist. The gases and their partial pressures are varied according to a predetermined time schedule and the halide and other reactant gases are selected so that the layers include (a) an adherent, continuous intermediate layer about 0.5-20 microns thick of an aluminum nitride or an aluminum oxynitride material, over and chemically bonded to the substrate body, and (b) an adherent, continuous first outermore »
- Inventors:
-
- Lexington, MA
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 867926
- Patent Number(s):
- 5035923
- Assignee:
- GTE Laboratories Incorporated (Waltham, MA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- AC05-84OR21400
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- process; deposition; temperature; stress; oxidation; resistant; coatings; silicon-based; substrates; depositing; coating; silicon; nitride-; carbide-based; substrate; gas; mixture; passed; 900; degree; -1500; torr; ambient; pressure; halide; vapors; suitable; reactant; gases; partial; ratios; flow; rates; times; sufficient; deposit; continuous; dense; adherent; gradually; varied; graded; layers; layer; changing; composition; material; deposited; thereon; defined; compositional; interfaces; exist; pressures; according; predetermined; time; schedule; selected; intermediate; 5-20; microns; thick; aluminum; nitride; oxynitride; chemically; bonded; outer; 5-900; including; oxide; zirconium; resistant coating; chemically bonded; halide vapor; halide vapors; reactant gases; aluminum nitride; predetermined time; outer layer; flow rates; silicon nitride; flow rate; silicon carbide; gas mixture; partial pressure; reactant gas; intermediate layer; deposited thereon; partial pressures; microns thick; oxidation resistant; resistant coatings; ambient pressure; silicon carbide-based; temperature stress; chemically bond; defined composition; pressure ratio; silicon nitride-; silicon-based substrates; graded coating; nitride material; process time; determined time; /427/
Citation Formats
Sarin, Vinod K. Process for the deposition of high temperature stress and oxidation resistant coatings on silicon-based substrates. United States: N. p., 1991.
Web.
Sarin, Vinod K. Process for the deposition of high temperature stress and oxidation resistant coatings on silicon-based substrates. United States.
Sarin, Vinod K. Tue .
"Process for the deposition of high temperature stress and oxidation resistant coatings on silicon-based substrates". United States. https://www.osti.gov/servlets/purl/867926.
@article{osti_867926,
title = {Process for the deposition of high temperature stress and oxidation resistant coatings on silicon-based substrates},
author = {Sarin, Vinod K},
abstractNote = {A process for depositing a high temperature stress and oxidation resistant coating on a silicon nitride- or silicon carbide-based substrate body. A gas mixture is passed over the substrate at about 900.degree.-1500.degree. C. and about 1 torr to about ambient pressure. The gas mixture includes one or more halide vapors with other suitable reactant gases. The partial pressure ratios, flow rates, and process times are sufficient to deposit a continuous, fully dense, adherent coating. The halide and other reactant gases are gradually varied during deposition so that the coating is a graded coating of at least two layers. Each layer is a graded layer changing in composition from the material over which it is deposited to the material of the layer and further to the material, if any, deposited thereon, so that no clearly defined compositional interfaces exist. The gases and their partial pressures are varied according to a predetermined time schedule and the halide and other reactant gases are selected so that the layers include (a) an adherent, continuous intermediate layer about 0.5-20 microns thick of an aluminum nitride or an aluminum oxynitride material, over and chemically bonded to the substrate body, and (b) an adherent, continuous first outer layer about 0.5-900 microns thick including an oxide of aluminum or zirconium over and chemically bonded to the intermediate layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 1991},
month = {Tue Jan 01 00:00:00 EST 1991}
}