Hydrogen ion microlithography
Abstract
Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing.
- Inventors:
-
- Lakewood, CO
- Boulder, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 867542
- Patent Number(s):
- 4960675
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Classifications (CPCs):
-
F - MECHANICAL ENGINEERING F23 - COMBUSTION APPARATUS F23G - CREMATION FURNACES
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- hydrogen; microlithography; disclosed; process; microelectronic; fabrication; semiconductor; device; processing; comprises; steps; providing; single; layer; amorphous; silicon; hydrogenated; material; pattern; recorded; selected; materials; preferentially; implanting; therein; permit; serve; mask-resist; wafer; suitable; subsequent; developed; provide; surface; adaptable; silicon material; microelectronic fabrication; device fabrication; single layer; amorphous silicon; hydrogenated amorphous; process comprises; semiconductor device; surface pattern; /430/250/438/
Citation Formats
Tsuo, Y Simon, and Deb, Satyen K. Hydrogen ion microlithography. United States: N. p., 1990.
Web.
Tsuo, Y Simon, & Deb, Satyen K. Hydrogen ion microlithography. United States.
Tsuo, Y Simon, and Deb, Satyen K. Mon .
"Hydrogen ion microlithography". United States. https://www.osti.gov/servlets/purl/867542.
@article{osti_867542,
title = {Hydrogen ion microlithography},
author = {Tsuo, Y Simon and Deb, Satyen K},
abstractNote = {Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 1990},
month = {Mon Jan 01 00:00:00 EST 1990}
}
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