Method of making silicon on insalator material using oxygen implantation
Abstract
The described embodiments of the present invention provide a semiconductor on insulator structure providing a semiconductor layer less susceptible to single event upset errors (SEU) due to radiation. The semiconductor layer is formed by implanting ions which form an insulating layer beneath the surface of a crystalline semiconductor substrate. The remaining crystalline semiconductor layer above the insulating layer provides nucleation sites for forming a crystalline semiconductor layer above the insulating layer. The damage caused by implantation of the ions for forming an insulating layer is left unannealed before formation of the semiconductor layer by epitaxial growth. The epitaxial layer, thus formed, provides superior characteristics for prevention of SEU errors, in that the carrier lifetime within the epitaxial layer, thus formed, is less than the carrier lifetime in epitaxial layers formed on annealed material while providing adequate semiconductor characteristics.
- Inventors:
-
- Dallas, TX
- Richardson, TX
- Issue Date:
- OSTI Identifier:
- 867095
- Patent Number(s):
- 4863878
- Assignee:
- Texas Instruments Incorporated (Dallas, TX)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- DNA001-C-0175
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; silicon; insalator; material; oxygen; implantation; described; embodiments; provide; semiconductor; insulator; structure; providing; layer; susceptible; single; event; upset; errors; seu; due; radiation; formed; implanting; form; insulating; beneath; surface; crystalline; substrate; remaining; provides; nucleation; sites; forming; damage; caused; left; unannealed; formation; epitaxial; growth; superior; characteristics; prevention; carrier; lifetime; layers; annealed; adequate; semiconductor substrate; semiconductor layer; insulating layer; epitaxial layer; epitaxial growth; damage caused; layer provides; crystalline semiconductor; single event; carrier lifetime; layers formed; nucleation sites; event upset; layer beneath; provides superior; structure providing; epitaxial layers; described embodiment; described embodiments; /438/148/
Citation Formats
Hite, Larry R, Houston, Ted, and Matloubian, Mishel. Method of making silicon on insalator material using oxygen implantation. United States: N. p., 1989.
Web.
Hite, Larry R, Houston, Ted, & Matloubian, Mishel. Method of making silicon on insalator material using oxygen implantation. United States.
Hite, Larry R, Houston, Ted, and Matloubian, Mishel. Sun .
"Method of making silicon on insalator material using oxygen implantation". United States. https://www.osti.gov/servlets/purl/867095.
@article{osti_867095,
title = {Method of making silicon on insalator material using oxygen implantation},
author = {Hite, Larry R and Houston, Ted and Matloubian, Mishel},
abstractNote = {The described embodiments of the present invention provide a semiconductor on insulator structure providing a semiconductor layer less susceptible to single event upset errors (SEU) due to radiation. The semiconductor layer is formed by implanting ions which form an insulating layer beneath the surface of a crystalline semiconductor substrate. The remaining crystalline semiconductor layer above the insulating layer provides nucleation sites for forming a crystalline semiconductor layer above the insulating layer. The damage caused by implantation of the ions for forming an insulating layer is left unannealed before formation of the semiconductor layer by epitaxial growth. The epitaxial layer, thus formed, provides superior characteristics for prevention of SEU errors, in that the carrier lifetime within the epitaxial layer, thus formed, is less than the carrier lifetime in epitaxial layers formed on annealed material while providing adequate semiconductor characteristics.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 1989},
month = {Sun Jan 01 00:00:00 EST 1989}
}