Pure silver ohmic contacts to N- and P- type gallium arsenide materials
Abstract
Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components an n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffused layer and the substrate layer, wherein the n-type layer comprises a substantially low doping carrier concentration.
- Inventors:
-
- Golden, CO
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- OSTI Identifier:
- 865741
- Patent Number(s):
- 4564720
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- EG-77-C-01-4042
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- pure; silver; ohmic; contacts; n-; p-; type; gallium; arsenide; materials; disclosed; improved; process; manufacturing; semiconductor; devices; components; n-type; substrate; layer; p-type; diffused; comprises; forming; contact; substantially; doping; carrier; concentration; substrate layer; p-type gallium; comprises forming; layer comprises; improved process; process comprises; semiconductor device; ohmic contact; semiconductor devices; gallium arsenide; ohmic contacts; n-type layer; n-type gallium; p- type; type gallium; /136/148/257/438/
Citation Formats
Hogan, Stephen J. Pure silver ohmic contacts to N- and P- type gallium arsenide materials. United States: N. p., 1986.
Web.
Hogan, Stephen J. Pure silver ohmic contacts to N- and P- type gallium arsenide materials. United States.
Hogan, Stephen J. Wed .
"Pure silver ohmic contacts to N- and P- type gallium arsenide materials". United States. https://www.osti.gov/servlets/purl/865741.
@article{osti_865741,
title = {Pure silver ohmic contacts to N- and P- type gallium arsenide materials},
author = {Hogan, Stephen J},
abstractNote = {Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components an n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffused layer and the substrate layer, wherein the n-type layer comprises a substantially low doping carrier concentration.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1986},
month = {Wed Jan 01 00:00:00 EST 1986}
}
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