Thin film photovoltaic device with multilayer substrate
Abstract
A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.
- Inventors:
-
- Rushland, PA
- Wilmington, DE
- Issue Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- OSTI Identifier:
- 864966
- Patent Number(s):
- 4443653
- Assignee:
- University of Delaware (Newark, DE)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- EG-77-C-01-4042
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- film; photovoltaic; device; multilayer; substrate; utilizes; compound; semiconductor; layer; chosen; iib; va; periodic; table; formed; lowermost; support; layers; additionally; uppermost; carbide; silicon; adjacent; below; metal; conductivity; expansion; coefficient; equal; slightly; expansion coefficient; silicon layer; metal layer; photovoltaic device; semiconductor layer; film photovoltaic; compound semiconductor; periodic table; support layer; multilayer substrate; /136/257/427/438/
Citation Formats
Catalano, Anthony W, and Bhushan, Manjul. Thin film photovoltaic device with multilayer substrate. United States: N. p., 1984.
Web.
Catalano, Anthony W, & Bhushan, Manjul. Thin film photovoltaic device with multilayer substrate. United States.
Catalano, Anthony W, and Bhushan, Manjul. Sun .
"Thin film photovoltaic device with multilayer substrate". United States. https://www.osti.gov/servlets/purl/864966.
@article{osti_864966,
title = {Thin film photovoltaic device with multilayer substrate},
author = {Catalano, Anthony W and Bhushan, Manjul},
abstractNote = {A thin film photovoltaic device which utilizes at least one compound semiconductor layer chosen from Groups IIB and VA of the Periodic Table is formed on a multilayer substrate The substrate includes a lowermost support layer on which all of the other layers of the device are formed. Additionally, an uppermost carbide or silicon layer is adjacent to the semiconductor layer. Below the carbide or silicon layer is a metal layer of high conductivity and expansion coefficient equal to or slightly greater than that of the semiconductor layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 1984},
month = {Sun Jan 01 00:00:00 EST 1984}
}
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